X-On Electronics has gained recognition as a prominent supplier of DF2B7AE,H3F esd suppressors / tvs diodes across the USA, India, Europe, Australia, and various other global locations. DF2B7AE,H3F esd suppressors / tvs diodes are a product manufactured by Toshiba. We provide cost-effective solutions for esd suppressors / tvs diodes, ensuring timely deliveries around the world.

DF2B7AE,H3F

DF2B7AE,H3F electronic component of Toshiba
Images are for reference only
See Product Specifications
Part No.DF2B7AE,H3F
Manufacturer: Toshiba
Category:ESD Suppressors / TVS Diodes
Description: ESD Suppressors / TVS Diodes ESD protection diode 10pF 6.8V
Datasheet: DF2B7AE,H3F Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

4000: USD 0.0357 ea
Line Total: USD 142.8

Availability - 0
MOQ: 4000  Multiples: 4000
Pack Size: 4000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 31 May to Thu. 06 Jun

MOQ : 4000
Multiples : 4000
4000 : USD 0.0386

0 - WHS 2


Ships to you between Thu. 06 Jun to Mon. 10 Jun

MOQ : 1
Multiples : 1
1 : USD 0.6727
10 : USD 0.5528
100 : USD 0.1094
1000 : USD 0.0562
4000 : USD 0.0468

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Maximum Operating Temperature
Packaging
Brand
Cnhts
Hts Code
Mxhts
Factory Pack Quantity :
Subcategory
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We proudly offer the DF2B7AE,H3F ESD Suppressors / TVS Diodes at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the DF2B7AE,H3F ESD Suppressors / TVS Diodes.

DF2B7AE ESD Protection Diodes Silicon Epitaxial Planar DF2B7AEDF2B7AEDF2B7AEDF2B7AE 1. 1. GeneralGeneral 1. 1. GeneralGeneral The DF2B7AE is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B7AE provides low dynamic resistance and superior protective performance. Furthermore, the DF2B7AE is housed in an ultra-compact package (0.8 mm 1.2 mm) to meet applications that require a small footprint. 2. 2. 2. 2. ApplicationsApplicationsApplicationsApplications Mobile Equipment Smartphones Tablets Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3. 3. FeaturesFeatures 3. 3. FeaturesFeatures (1) Suitable for use with a 5 V signal line. (V 5.5 V) RWM (2) Protects devices with its high ESD performance. (V = 30 kV (Contact / Air) IEC61000-4-2) ESD (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (R = 0.2 (typ.)) DYN (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (V = 11 V I = 4 A (typ.)) C PP (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.8 mm 1.2 mm size (Toshiba package name: ESC)) 4. 4. 4. 4. PackagingPackagingPackagingPackaging ESC Start of commercial production 2016-10 2016-2017 2017-12-22 1 Toshiba Electronic Devices & Storage Corporation Rev.2.0DF2B7AE 5. 5. 5. 5. Example of Circuit DiagramExample of Circuit DiagramExample of Circuit DiagramExample of Circuit Diagram 6. 6. 6. 6. Quick Reference DataQuick Reference DataQuick Reference DataQuick Reference Data Characteristics Symbol Note Test Condition Min Typ. Max Unit Working peak reverse voltage V (Note 1) 5.5 V RWM Total capacitance C V = 0 V, f = 1 MHz 8.5 10 pF t R Dynamic resistance R (Note 2) 0.2 DYN Electrostatic discharge voltage V (Note 3) 30 kV ESD (IEC61000-4-2) (Contact) Note 1: Recommended operating condition. Note 2: TLP parameters: Z0 = 50 , tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 ns, extraction of dynamic resistance using least squares fit of TLP characteristics between I = 8 A and I = 16 A. PP1 PP2 Note 3: Criterion: No damage to devices. 2016-2017 2017-12-22 2 Toshiba Electronic Devices & Storage Corporation Rev.2.0

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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