Product Information

RSB12JS2T2R

RSB12JS2T2R electronic component of ROHM

Datasheet
TVS Diode Arrays TVS ARRAY
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

277: USD 0.1327 ea
Line Total: USD 36.76

5177 - Global Stock
Ships to you between
Fri. 10 May to Thu. 16 May
MOQ: 277  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
3453 - WHS 1


Ships to you between
Fri. 17 May to Wed. 22 May

MOQ : 5
Multiples : 5
5 : USD 0.354
50 : USD 0.3119
150 : USD 0.2939
500 : USD 0.2715
2500 : USD 0.2615
5000 : USD 0.2554

6820 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.4761
10 : USD 0.4106
100 : USD 0.2887
500 : USD 0.2323
1000 : USD 0.1782
2500 : USD 0.1771
8000 : USD 0.161
48000 : USD 0.1564

5177 - WHS 3


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 277
Multiples : 1
277 : USD 0.1327
500 : USD 0.1293

5679 - WHS 4


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 291
Multiples : 1
291 : USD 0.305
500 : USD 0.2967
1000 : USD 0.2909

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Minimum Operating Temperature
Series
Capacitance
Dimensions
Termination Style
Brand
Channels
Case Height
Polarity
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

Data Sheet Low Capacitance Protection Device RSB12JS2 Applications Dimensions Unit : mm Land size figure(Unit : mm) ESD Protection 1.0 0.5 0.5 1.60.1 0.220.05 0.130.05 (6) (5) (4) Features 0.3 0.25 0.25 0.15 0.15 1) Ultra small mold type. (EMD6) 2) Low capacitance 3) Bi direction 00.1 0.4 EMD6 (1) (2) (3 ) 0.5 0.5 Construction 1.00.1 0.50.05 (6)(5) (4) Silicon Epitaxial Planar Structure ROHM : EMD6 JEITA : SC-75A Size dot (year week factory) (1) (2) (3) Please make 3 and 6 Pin open in circuit upon use. Taping specificationsUnit : mm +0.1 2.00.05 4.00.1 1.5 0 0.30.1 1PIN 0.80.1 4.00.1 1.70.05 0.650.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm150W Junction temperature Tj 150 C Storage temperature 55 to 150 Tstg C Electrical characteristic (Ta=25C)( Rating of per diode) Parameter Conditions Symbol Min. Typ. Max. Unit Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C -1 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 1/2 1.20.1 1.60.1 1.650.1 5.50.2 0 0.1 3.50.05 1.750.1 ~ 0.45 8.00.2 1.650.01 1.55Data Sheet RSB12JS2 Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 100 1 Ta=25 Ta=75 Ta=75 10 Ta=125 Ta=25 0.1 1 1 Ta=-25 Ta=150 0.1 Ta=-25 0.01 0.01 0.001 0.001 0.0001 0.1 12 13 14 15 16 17 01 234 567 89 012 345 6789 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEVR(V) REVERSE VOLTAGE:VR(V) Vz-Iz CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 10 13.8 1.5 Ta=25 Ta=25 Ta=25 9 1.4 IZ=5mA f=1MHz VR=9V 8 13.7 n=30pcs 1.3 VR=0V n=30pcs n=10pcs 7 1.2 6 1.1 13.6 5 1 4 13.5 0.9 AVE:0.996pF 3 0.8 AVE:13.572V AVE:0.3089nA 2 0.7 13.4 0.6 1 0.5 13.3 0 Vz DISRESION MAP Ct DISRESION MAP IR DISRESION MAP 100 1000 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board 10 IM=10mA IF=100mA 10 time 1ms 300us 1 1 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.C 2/2 ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() ZENER CURRENT:Iz(mA) TRANSIENT REVERSE CURRENT:IR (nA) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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