Product Information

RSB12WFHTL

RSB12WFHTL electronic component of ROHM

Datasheet
ESD Suppressors / TVS Diodes ZENER DIODE
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.4474 ea
Line Total: USD 0.45

2043 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2043 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 0.4474
10 : USD 0.345
100 : USD 0.2093
500 : USD 0.192
1000 : USD 0.1392
3000 : USD 0.1265
9000 : USD 0.1173
24000 : USD 0.1173
45000 : USD 0.1127

Read More Specifications

     
Manufacturer
Product Category
Pd - Power Dissipation
Maximum Operating Temperature
Package / Case
Packaging
Qualification
Hts Code
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Additional Infomation About Product

Data Sheet AEC-Q101 Qualified Low Capacitance Protection Device RSB12WFH Applications Dimensions(Unit : mm) Land size figure(Unit : mm) ESD Protection 1.0 0.5 0.5 1.6 0.2 0.30.1 0.15 0.05 0.05 (3) Features 0.7 1)Ultra small mold type.(EMD3) 2)Low capacitance 0 0.1 3)Bi direction 0.6 0.6 (2) (1 ) 0.20.1 -0.05 EMD3 0.55 0.1 0.5 0.5 1.0 0.1 0.7 0.1 Construction Silicon epitaxial planer Structure ROHM : EMD3 JEDEC : SOT-416 JEITA : SC-75A dot(year week factory) Taping specifications(Unit : mm) 1.1.5550.0.11 4.00.1 2.00.05 0.30.1 00 1.80.1 0.50.1 0.90.2 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Power dissipation Pm150W Junction temperature Tj 150 C Storage temperature 55 to 150 Tstg C Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V 9.6 - 14.4 V I =5mA Z Z Reverse current I - - 0.10 A V =9V R R Capacitance between terminals C -1 - pF f=1MHz,V =0V t R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.B 1/2 0.8 0.1 1. 60. 2 0.1M in 0.7 1.80.2 5.50.2 0.7 00.1 3.50.05 1.750.1 8.00.2 1.3RSB12WFH Data Sheet Electrical characteristics curve 10000 10 10 Ta=150 Ta=125 f=1MHz 1000 Ta=25 100 1 Ta=75 Ta=75 10 Ta=125 Ta=- Ta=25 1 0.1 1 Ta=150 0.1 Ta=- 0.01 0.01 0.001 0.0001 0.001 0.1 11 12 13 14 15 16 01 2 345 67 89 01 234 567 8 9 ZENER VOLTAGE:Vz(V) REVERSE VOLTAGEV (V) R REVERSE VOLTAGE:V (V) R Vz-Iz CHARACTERISTICS V -I CHARACTERISTICS R R V -Ct CHARACTERISTICS R 10 1.5 13.8 Ta=25 Ta=25 Ta=25 9 1.4 I =5mA V =9V f=1MHz Z R 8 1.3 13.7 V =0V n=30pcs n=30pcs R 7 n=10pcs 1.2 6 1.1 13.6 5 1 4 13.5 0.9 AVE:0.996pF 3 0.8 AVE:13.572V 2 13.4 0.7 AVE:0.3089nA 1 0.6 0 13.3 0.5 Vz DISRESION MAP Ct DISRESION MAP I DISRESION MAP R 10000 Mounted on epoxy board 100 I =1mA I =10mA M F 1ms time 1000 Rth(j- 300us ) 10 IM=10mA IF=100mA Rth(j- 100 ) time 1ms 300us 1 10 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 TIME:t(s) ZENER CURRENT(mA) Rth-t CHARACTERISTICS Zz-Iz CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.04 - Rev.B ZENER CURRENT:Iz(mA) ZENER VOLTAGE:Vz() DYNAMIC IMPEDANCE:Zz() TRANSIENT REVERSE CURRENT:I (nA) REVERSE CURRENT:I (nA) R R THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE CAPACITANCE BETWEEN BETWEENTERMINALS:Ct(pF) TERMINALS:Ct(pF)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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