Product Information

BAS516,H3F

Name: BAS516,H3F
Brand: Toshiba
SKU: BAS516H3F_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

BAS516,H3F electronic component of Toshiba

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Datasheet

Diodes - General Purpose, Power, Switching Switching Diode 100V .35pF .25A

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

4000: USD 0.0249 ea
Line Total: USD 99.6

0 - Global Stock

MOQ: 4000 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Warehouse 1 Ships to you between Mon. 06 May to Fri. 10 May MOQ : 4000 Multiples : 4000 BAS516,H3F Toshiba	4000 : USD 0.0264 8000 : USD 0.0261 12000 : USD 0.0259 20000 : USD 0.0256 24000 : USD 0.0254 28000 : USD 0.0251 40000 : USD 0.0249 100000 : USD 0.0246 200000 : USD 0.0244

0 - Warehouse 2 Ships to you between Fri. 10 May to Tue. 14 May MOQ : 1 Multiples : 1 BAS516,H3F Toshiba	1 : USD 0.4725 10 : USD 0.4302 100 : USD 0.0984 500 : USD 0.0587 1000 : USD 0.0398 4000 : USD 0.0299 8000 : USD 0.0259 24000 : USD 0.0229 48000 : USD 0.0189

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Additional Infomation About Product

BAS516 Switching Diodes Silicon Epitaxial Planar BAS516BAS516BAS516BAS516 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Cathode 2: Anode ESC 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 100 V RM Reverse voltage V 100 R Peak forward current I 500 mA FM Average rectified current I 250 O Non-repetitive peak forward surge current I (Note 1) 1 A FSM Power dissipation P (Note 2) 150 mW D Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Measured with a 10 ms pulse. Note 2: Mounted on an FR4 board (20 mm 20 mm, Cu pad: 4 mm 4 mm) Start of commercial production 2016-08 2016 Toshiba Corporation 2016-10-20 1 Rev.1.0BAS516 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.00 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 200 R R Total capacitance C V = 0 V, f = 1 MHz 0.35 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 3.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm)Land Pattern Dimensions (Unit: mm) 2016 Toshiba Corporation 2016-10-20 2 Rev.1.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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