Product Information

BAV70,LM

Name: BAV70,LM
Brand: Toshiba
SKU: BAV70LM_Toshiba
Availability: OutOfStock
Rating: 5 (11 reviews)

BAV70,LM electronic component of Toshiba

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See Product Specifications
Datasheet

Diodes - General Purpose, Power, Switching Switching Diode 100V .9pF .215A

Manufacturer: Toshiba

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

3000: USD 3.3306 ea
Line Total: USD 9991.8

0 - Global Stock

MOQ: 3000 Multiples: 3000
Pack Size: 3000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - Warehouse 1 Ships to you between Mon. 06 May to Fri. 10 May MOQ : 3000 Multiples : 3000 BAV70,LM Toshiba	3000 : USD 0.0307 6000 : USD 0.0305 9000 : USD 0.0301 12000 : USD 0.0299 15000 : USD 0.0296 24000 : USD 0.0292 30000 : USD 0.029 75000 : USD 0.0286 150000 : USD 0.0284

0 - Warehouse 2 Ships to you between Mon. 06 May to Fri. 10 May MOQ : 3000 Multiples : 3000 BAV70,LM Toshiba	3000 : USD 0.0243

0 - Warehouse 3 Ships to you between Fri. 10 May to Tue. 14 May MOQ : 1 Multiples : 1 BAV70,LM Toshiba	1 : USD 0.5696 10 : USD 0.523 100 : USD 0.1187 500 : USD 0.0704 1000 : USD 0.0487 3000 : USD 0.0362 9000 : USD 0.0311 24000 : USD 0.028 45000 : USD 0.0228

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Additional Infomation About Product

BAV70 Switching Diodes Silicon Epitaxial Planar BAV70BAV70BAV70BAV70 1. 1. ApplicationsApplications 1. 1. ApplicationsApplications Ultra-High-Speed Switching 2. 2. 2. 2. Packaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal CircuitPackaging and Internal Circuit 1: Anode 1 2: Anode 2 3: Cathode SOT23 3. 3. 3. 3. Absolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, TAbsolute Maximum Ratings (Note) (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Note Rating Unit Peak reverse voltage V 100 V RM Reverse voltage V 100 R Average rectified current I (Note 1) 215 mA O Peak forward current I (Note 1) 500 FM Non-repetitive peak forward surge current I (Note 1), (Note 2) 2 A FSM Power dissipation P 150 mW D (Note 3) 320 Junction temperature T 150 j Storage temperature T -55 to 150 stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook Handling PrecautionDerating Concept and Method) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Unit rating. Total rating = Unit rating 1.5 Note 2: Measured with a 10 ms pulse. Note 3: Mounted on an FR4 board (25.4 mm 25.4 mm 1.6 mmt, Cu pad: 0.42 mm2 3) Start of commercial production 2016-08 2016 Toshiba Corporation 2016-10-20 1 Rev.1.0BAV70 4. 4. 4. 4. Electrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, TElectrical Characteristics (Unless otherwise specified, T = 25 = 25 = 25 = 25 )))) aaaa Characteristics Symbol Test Condition Min Typ. Max Unit Forward voltage V (1) I = 1 mA 0.715 V F F V (2) I = 10 mA 0.855 F F V (3) I = 50 mA 1.0 F F V (4) I = 150 mA 1.25 F F Reverse current I (1) V = 25 V 30 nA R R I (2) V = 80 V 200 R R Total capacitance C V = 0 V, f = 1 MHz 0.9 pF t R Reverse recovery time t I = 10 mA, See Fig. 4.1. 4.0 ns rr F Fig. Fig. Fig. Fig. 4.14.14.14.1 Reverse recovery time (tReverse recovery time (tReverse recovery time (tReverse recovery time (trrrrrrrr) Test circuit) Test circuit) Test circuit) Test circuit 5. 5. MarkingMarking 5. 5. MarkingMarking 6. 6. 6. 6. Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only)Land Pattern Dimensions (for reference only) SOT23 (Unit: mm)SOT23 (Unit: mm)SOT23 (Unit: mm)SOT23 (Unit: mm) 2016 Toshiba Corporation 2016-10-20 2 Rev.1.0

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Toshiba may also be referenced as

Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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