Product Information

RFN20TJ6SGC9

RFN20TJ6SGC9 electronic component of ROHM

Datasheet
Diodes - General Purpose, Power, Switching 600V Vrm 20A Io TO220ACFP
Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.7798 ea
Line Total: USD 1.78

3232 - Global Stock
Ships to you between
Wed. 29 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1680 - WHS 1


Ships to you between Wed. 29 May to Fri. 31 May

MOQ : 1
Multiples : 1
1 : USD 1.7798
10 : USD 1.4713
100 : USD 1.2459
500 : USD 1.0785
1000 : USD 0.929
3000 : USD 0.9196
5000 : USD 0.9136
10000 : USD 0.8839

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Peak Reverse Voltage
Max Surge Current
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Packaging
Brand
Operating Temperature Range
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif

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Additional Infomation About Product

Super Fast Recovery Diode RFN20TJ6S Data Sheet lSeries lDimensions (Unit : mm) lStructure 4.50.1 f3.10.1 Standard Fast Recovery 10.20.2 2.60.1 lApplication General rectification Anode Cathode RFN20 TJ6S 1 2 lFeatures 2.60.1 1) Low forward voltage 1.40.2 2) Low switching loss 3) High current overload capacity 0.60.1 2.540.1 0.830.1 lConstruction 5.080.1 Silicon epitaxial planar type ROHM : TO220ACFP 1 : Manufacture year, week,day, package code 2 : Serial number lAbsolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 600 Repetitive peak reverse voltage V RM V Direct reverse voltage 600 Reverse voltage V R I 60Hz half sin wave , resistive load T =50C Average current c 20 A o 60Hz half sin wave, one cycle, non-repetitive at T =25C Non-repetitive forward surge current I j 150 A FSM Operating junction temperature T - 150 C j Storage temperature T - -55 to +150 C stg lElectrical Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit T =25C 1.0 1.25 1.55 V j V I =20A Forward voltage F F T =125C - 1.1 - V j T =25C j - 0.1 10 mA I V =600V Reverse current R R T =125C j - 7 200 mA I =0.5A, I =1A, Irr=0.25I - 40 60 ns F R R Reverse recovery time trr I =20A, V =400V, dI /dt=-100A/ ms - 85 140 ns F R F I =20A, dI /dt=100A/ ms, Forward recovery time tfr - 300 - ns F F V V =1.1xV Forward recovery voltage - 3.2 - V Fp FR Fmax R (j-a) Junction to ambient - - 7.5 C/W th Thermal resistance R (j-c) Junction to case - - 2.5 C/W th www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.A 1/5 3 16.00.1 9.560.2 3.950.1 13.51 28.560.2 9.050.1 6 15.050.1 Data Sheet RFN20TJ6S lElectrical Characteristic Curves 100000 100 T = 125 C T = 150 C j j 10000 10 T = 75 C 1000 j 1 T = 150 C j 100 T = 25 C j T = 125 C j 0.1 T = 75 C 10 j T = 25 C j 0.01 1 0 100 200 300 400 500 600 0 500 1000 1500 2000 2500 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 1000 T = 25 C j f = 1MHz T = 25 C a 100 100 10 I FSM 8.3ms 8.3ms 1cyc. 10 1 0 5 10 15 20 25 30 1 10 100 NUMBER OF CYCLES REVERSE VOLTAGE : V (V) R I -CYCLE CHARACTERISTICS V -C CHARACTERISTICS FSM R t www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 2015.04 - Rev.A 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t PEAK SURGE REVERSE CURRENT : I (nA) R FORWARD CURRENT : I (A) FSM

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ROHM may also be referenced as

LAPIS Semiconductor
RHE
RHM
ROHM Semicon
ROHM Semiconductor

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