Product Information

BAW56-G3-08

BAW56-G3-08 electronic component of Vishay

Datasheet
Diodes - General Purpose, Power, Switching 70V 250mA .5A IFSM Dual Common Anode
Manufacturer: Vishay
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3519 ea
Line Total: USD 0.35

4883 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
4384 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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BAW56-G3-08
Vishay

1 : USD 0.2427
10 : USD 0.1633
100 : USD 0.0667
1000 : USD 0.0471
2500 : USD 0.0333
15000 : USD 0.0322
45000 : USD 0.0287
90000 : USD 0.0276

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RoHS - XON
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Additional Infomation About Product

BAW56-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode, Dual FEATURES Silicon epitaxial planar diode 3 Fast switching dual diode with common anode AEC-Q101 qualified available (part number on request) Base P/N-G3 - green, commercial grade 1 2 Material categorization: for definitions of compliance please see www.vishay.com/doc 99912 DESIGN SUPPORT TOOLS click logo to get started Models Available MECHANICAL DATA Case: SOT-23 Weight: approx. 8.1 mg Packaging codes / options: 18/10K per 13 reel (8 mm tape), 10K(/box 08/3K per 7 reel (8 mm tape), 15K/box PARTS TABLE PART ORDERING CODE CIRCUIT CONFIGURATION TYPE MARKING REMARKS BAW56-G BAW56-G3-08 or BAW56-G3-18 Common anode JDG Tape and reel ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT Repetitive peak reverse voltage = working peak reverse voltage V = V 70 V R RRM = DC blocking voltage Forward continuous current I 250 mA F t = 1 s I 2A p FSM Non repetitive peak forward current t = 1 ms I 1A p FSM t = 1 s I 0.5 A p FSM (1) Power dissipation P 350 mW tot THERMAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL VALUE UNIT (1) Thermal resistance junction to ambient air R 430 K/W thJA Junction temperature T 150 C j Storage temperature range T -65 to +150 C stg Operating temperature range T -55 to +150 C op Note (1) Device on fiberglass substrate Rev. 1.3, 13-Feb-18 Document Number: 85872 1 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 BAW56-G www.vishay.com Vishay Semiconductors ELECTRICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT I = 1 mA V 0.715 V F F I = 10 mA V 0.855 V F F Forward voltage I = 50 mA V 1V F F I = 150 mA V 1.25 V F F V = 70 V I 2500 nA R R Reverse current V = 70 V, T = 150 C I 100 A R j R V = 25 V, T = 150 C I 30 A R j R Diode capacitance V = V = 0, f = 1 MHz C 2pF F R D I =10 mA to i =1 mA, F R Reverse recovery time t 6ns rr V = 6 V, R = 100 R L TYPICAL CHARACTERISTICS (T = 25 C, unless otherwise specified) amb 2 1000 10 D = 0.005 0.01 0.02 100 0.05 1 10 0.1 0.2 T = 100 C j / 10 FM 25 C 0 10 1 -1 10 0.1 t p t p D = T T -2 0.01 10 -6 -5 -4 -3 -2 -1 -0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 10 10 10 10 10 10 10 s 14356 V - Forward Voltage (V) 22290 t F Fig. 1 - Forward Current vs. Forward Voltage Fig. 2 - Peak Forward Current / = f (t ) fm p Rev. 1.3, 13-Feb-18 Document Number: 85872 2 For technical questions within your region: DiodesAmericas vishay.com, DiodesAsia vishay.com, DiodesEurope vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 I - Forward Current (mA) F

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Vishay may also be referenced as

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BEYSCHLAG
DALE
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DLE
DRALORIC / VISHAY
General Semi
GENERAL SEMI.
GENERAL SEMICONDUCTOR (VISHAY)
GS
HUNTINGTON ELECTRIC
Micro-Measurements (Division of Vishay Precision Group)
ROEDERSTEIN
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Vishay Siliconix
Vishay Spectrol
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Vishay / BC Components
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Vishay / Dale
Vishay / Draloric
Vishay / Electro-Films
Vishay / Huntington
VISHAY / LITE-ON
Vishay / MCB Industrie
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Vishay / Milwaukee
Vishay / Polytech
Vishay / Roederstein
Vishay / Sfernice
Vishay / Siliconix
Vishay / Spectrol
Vishay / Sprague
Vishay / Tansitor
Vishay / Techno
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Vishay / Vitramon
Vishay BC Components
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Vishay Beyschlag/Draloric/BC Components
VISHAY CERA-MITE
Vishay Dale
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Vishay Foil Resistors (Division of Vishay Precision Group)
VISHAY FOIL RESISTORS / VPG
Vishay General Semiconductor
Vishay Huntington Electric Inc.
Vishay Intertech
Vishay Micro-Measurements
VISHAY OPTO
Vishay Precision
Vishay Precision Group
Vishay Precision Group Foil Resistors
VISHAY ROEDERSTEIN
VISHAY SEMICONDUCTOR
Vishay Semiconductor Diodes Division
Vishay Semiconductor Opto Division
Vishay Semiconductors
Vishay Sfernice
Vishay Siliconix
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VishayBC Components
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VITROMON
VSC
VSO
VSS

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