Product Information

1SS314,H3F

1SS314,H3F electronic component of Toshiba

Datasheet
Toshiba PIN Diodes VHF Tuner 1.2pF 0.5 Ohm 30VR

Manufacturer: Toshiba
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0716 ea
Line Total: USD 0.72

2764 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
5208 - WHS 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 10
Multiples : 10

Stock Image

1SS314,H3F
Toshiba

10 : USD 0.0551
100 : USD 0.0442
300 : USD 0.0387
3000 : USD 0.0346
6000 : USD 0.0313
9000 : USD 0.0297

     
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Product Category
RoHS - XON
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Type
Cnhts
Hts Code
Mxhts
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1SS314 TOSHIBA Diode Silicon Epitaxial Planar Type 1SS314 VHF Tuner Band Switch Applications Unit: mm Small package. Small total capacitance: C = 1.2 pF (max) T Low series resistance: r = 0.5 (typ.) s Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Reverse voltage V 30 V R Forward current I 100 mA F Junction temperature T 125 C j Storage temperature range T 55~125 C stg Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. JEDEC operating temperature/current/voltage, etc.) are within the JEITA absolute maximum ratings. Please design the appropriate reliability upon reviewing the TOSHIBA 1-1E1A Toshiba Semiconductor Reliability Handbook (Handling Weight: 0.004 g (typ.) Precautions/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. MaxUnit Forward voltage V I = 2 mA 0.85 V F F Reverse current I V = 15 V 0.1 A R R Reverse voltage V I = 1 A 30 V R R Total capacitance C V = 6 V, f = 1 MHz 0.7 1.2 pF T R Series resistance r I = 2 mA, f = 100 MHz 0.5 0.9 s F Marking Start of commercial production 1987-05 1 2014-03-01 1SS314 2 2014-03-01

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Toshiba Memory
Toshiba Memory Corporation
Toshiba Semiconductor and Storage
TOSHIBA SEMICONDUCTORS
TS4

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