Product Information

MURF8L60 C0

MURF8L60 C0 electronic component of Taiwan Semiconductor

Datasheet
Rectifiers 8A 600V High Efficient Recovery Rectifier
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2557 ea
Line Total: USD 1.26

1590 - Global Stock
Ships to you between
Thu. 30 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1489 - WHS 1


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

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MURF8L60 C0
Taiwan Semiconductor

1 : USD 0.9029
10 : USD 0.7974
100 : USD 0.6181
500 : USD 0.5019
1000 : USD 0.4176
2500 : USD 0.3737
5000 : USD 0.3619
10000 : USD 0.3619

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Additional Infomation About Product

MURF8L60 Taiwan Semiconductor CREAT BY ART 8A, 600V Glass Passivated Low VF Super Fast Rectifier FEATURES - Low conduction loss for high efficiency - Excellent high temperature stability - High forward surge capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 1 2 TYPICAL APPLICATIONS ITO-220AC MURF8L60 is especially suited as boost diode in discontinuous mode power factor correction or as a free wheeling diode in other power supply applications. MECHANICAL DATA Case: ITO-220AC Molding compound, UL flammability classification rating 94V-0 Part no. with suffix means AEC-Q101 qualified Packing code with suffix means green compound (halogen-free) Terminal: Matte tin plated leads, solderable per JESD22-B102 Meets JESD 201 class 2 whisker test Polarity: As marked Mounting torque: 0.56 Nm maximum Weight: 1.85g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25C unless otherwise noted) A PARAMETER MURF8L60 SYMBOL UNIT Maximum repetitive peak reverse voltage V 600 V RRM Maximum RMS Voltage V 420 V RMS Maximum DC Blocking Voltage V 600 V DC Maximum average forward rectified current I 8 A F(AV) Non-repetitive peak forward surge current I 100 A FSM 8.3ms single sine-wave Maximum instantaneous forward voltage (Note 1) V 1.3 V F I = 8 A F T =25C 5 J Maximum reverse current rated V I A R R T =125C 200 J Maximum reverse recovery time t 65 ns rr I =0.5A, I =1A, I =0.25A F R RR R 2.8 JC Typical thermal resistance C/W R 10 JA Operating junction temperature range T - 55 to +175 C J Storage temperature range T - 55 to +175 C STG Note 1: Pulse test with PW=300s, 1% duty cycle Version: B1512MURF8L60 Taiwan Semiconductor ORDERING INFORMATION PART NO. PACKING PACKING CODE PACKAGE PACKING PART NO. CODE SUFFIX SUFFIX MURF8L60 H C0 G ITO-220AC 50 / Tube EXAMPLE PART NO. PACKING CODE EXAMPLE P/N PACKING CODE DESCRIPTION PART NO. SUFFIX SUFFIX AEC-Q101 qualified MURF8L60HC0G MURF8L60 H C0 G Green compound RATINGS AND CHARACTERISTICS CURVES (T =25C unless otherwise noted) A FIG. 2 MAXIMUM NON-REPETITIVE FORWARD FIG.1 FORWARD CURRENT DERATING CURVE SURGE CURRENT 125 10 8.3ms single half sine wave 8 100 75 6 4 50 Resistive or inductive load 2 25 with heat sink 0 0 0 25 50 75 100 125 150 175 1 10 100 NUMBER OF CYCLES AT 60 Hz CASE TEMPERATURE ( C) FIG. 3 TYPICAL INSTANTANEOUS FORWARD FIG. 4 TYPICAL REVERSE CHARACTERISTICS CHARACTERISTICS 100 10 Pulse width=300s 1% duty cycle T =125 C J 1 10 T =125 C J 0. 1 1 T =25 C J T =25 C J 0. 01 0. 1 0 20406080 100 0 0. 2 0. 4 0. 6 0. 8 1 1. 2 1. 4 1. 6 FORWARD VOLTAGE (V) PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Version: B1512 AVERAGE FORWARD A INSTANTANEOUS FORWARD CURRENT (A) CURRENT (A) INSTANTANEOUS REVERSE CURRENT (A) PEAK FORWARD SURGE CURRENT (A)

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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