Product Information

P4SMA18AHM2G

P4SMA18AHM2G electronic component of Taiwan Semiconductor

Datasheet
ESD Suppressors TVS Diodes 400W 18V 5% Unidirectional TVS
Manufacturer: Taiwan Semiconductor
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Price (USD)

1: USD 0.6077 ea
Line Total: USD 0.61

6645 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

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6383 - WHS 1


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

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P4SMA18AHM2G
Taiwan Semiconductor

1 : USD 0.4278
10 : USD 0.3036
100 : USD 0.153
1000 : USD 0.1104
2500 : USD 0.1012
7500 : USD 0.0874
22500 : USD 0.0874
45000 : USD 0.0805
97500 : USD 0.077

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Additional Infomation About Product

P4SMA6.8(A) P4SMA200(A) Taiwan Semiconductor 400W, 6.8V - 200V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement PARAMETER VALUE UNIT Glass passivated junction V 5.5 - 171 V WM Excellent clamping capability V 6.12 - 210 V Fast response time: Typically less than 1.0ps BR Typical I less than 1A above 10V P R PPM 400 W t = 10/1000 s waveform Moisture sensitivity level: level 1, per J-STD-020 p RoHS Compliant T 150 C J MAX Halogen-free according to IEC 61249-2-21 Package DO-214AC (SMA) Configuration Single die APPLICATIONS Switching mode power supply (SMPS) Adapters Lighting application On-board DC/DC converter MECHANICAL DATA Case: DO-214AC (SMA) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Weight: 0.060 g (approximately) DO-214AC (SMA) ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL VALUE UNIT Peak power dissipation at T = 25C, tp = 1ms (Note 1) P 400 W A PK Peak forward surge current, 8.3ms single half sine-wave I 40 A FSM superimposed on rated load Maximum instantaneous forward voltage at 25A for V 3.5 V F unidirectional only Operating junction temperature range T -55 to +150 C J Storage temperature range T -55 to +150 C STG Note: 1. Non-repetitive current pulse per fig. 3 and derated above T = 25C per fig. 2 A Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types P4SMA6.8 - types P4SMA200A 2. Electrical characteristics apply in both directions 1 Version: R2005 P4SMA6.8(A) P4SMA200(A) Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A Breakdown Working Maximum Maximum Test Maximum reverse Maximum peak Temperature voltage stand-off clamping current leakage current Marking impulse current Coefficient (1) Part number V I voltage voltage BR T code (1) of V BR I I V T R WM I (A) PPM (V) V V I (V) WM C PPM (%/C) tp =10/1000 s (mA) (A) tp =10/1000 s (V) Min Max P4SMA6.8 ADJ 6.12 7.48 10 5.50 1000 38.0 10.8 0.057 P4SMA6.8A AEJ 6.46 7.14 10 5.80 1000 40.0 10.5 0.057 P4SMA7.5 AFJ 6.75 8.25 10 6.05 500 35.0 11.7 0.061 P4SMA7.5A AGJ 7.13 7.88 10 6.40 500 37.0 11.3 0.061 P4SMA8.2 AHJ 7.38 9.02 10 6.63 200 33.0 12.5 0.065 P4SMA8.2A AKJ 7.79 8.61 10 7.02 200 34.0 12.1 0.065 P4SMA9.1 ALJ 8.19 10.00 1.0 7.37 50 30.0 13.8 0.068 P4SMA9.1A AMJ 8.65 9.55 1.0 7.78 50 31.0 13.4 0.068 P4SMA10 ANJ 9.00 11.00 1.0 8.10 10 28.0 15.0 0.073 P4SMA10A APJ 9.50 10.50 1.0 8.55 10 29.0 14.5 0.073 P4SMA11 AQJ 9.90 12.10 1.0 8.92 1 26.0 16.2 0.075 P4SMA11A ARJ 10.50 11.60 1.0 9.40 1 27.0 15.6 0.075 P4SMA12 ASJ 10.80 13.20 1.0 9.72 1 24.0 17.3 0.078 P4SMA12A ATJ 11.40 12.60 1.0 10.2 1 25.0 16.7 0.078 P4SMA13 AUJ 11.70 14.30 1.0 10.5 1 22.0 19.0 0.081 P4SMA13A AVJ 12.40 13.70 1.0 11.1 1 23.0 18.2 0.081 P4SMA15 AWJ 13.50 16.50 1.0 12.1 1 19.0 22.0 0.084 P4SMA15A AXJ 14.30 15.80 1.0 12.8 1 20.0 21.2 0.084 P4SMA16 AYJ 14.40 17.60 1.0 12.9 1 17.8 23.5 0.086 P4SMA16A AZJ 15.20 16.80 1.0 13.6 1 18.6 22.5 0.086 P4SMA18 BDJ 16.20 19.80 1.0 14.5 1 16.0 26.5 0.088 P4SMA18A BEJ 17.10 18.90 1.0 15.3 1 16.5 25.5 0.088 P4SMA20 BFJ 18.00 22.00 1.0 16.2 1 14.0 29.1 0.090 P4SMA20A BGJ 19.00 21.00 1.0 17.1 1 15.0 27.7 0.090 P4SMA22 BHJ 19.80 24.20 1.0 17.8 1 13.0 31.9 0.092 P4SMA22A BKJ 20.90 23.10 1.0 18.8 1 13.7 30.6 0.092 P4SMA24 BLJ 21.60 26.40 1.0 19.4 1 12.0 34.7 0.094 P4SMA24A BMJ 22.80 25.20 1.0 20.5 1 12.6 33.2 0.094 P4SMA27 BNJ 24.30 29.70 1.0 21.8 1 10.7 39.1 0.096 P4SMA27A BPJ 25.70 28.40 1.0 23.1 1 11.0 37.5 0.096 P4SMA30 BQJ 27.00 33.00 1.0 24.3 1 9.6 43.5 0.097 P4SMA30A BRJ 28.50 31.50 1.0 25.6 1 10.0 41.4 0.097 P4SMA33 BSJ 29.70 36.30 1.0 26.8 1 8.8 47.7 0.098 P4SMA33A BTJ 31.40 34.70 1.0 28.2 1 9.0 45.7 0.098 P4SMA36 BUJ 32.40 39.60 1.0 29.1 1 8.0 52.0 0.099 P4SMA36A BVJ 34.20 37.80 1.0 30.8 1 8.4 49.9 0.099 P4SMA39 BWJ 35.10 42.90 1.0 31.6 1 7.4 56.4 0.100 P4SMA39A BXJ 37.10 41.00 1.0 33.3 1 7.7 53.9 0.100 P4SMA43 BYJ 38.70 47.30 1.0 34.8 1 6.7 61.9 0.101 P4SMA43A BZJ 40.90 45.20 1.0 36.8 1 7.0 59.3 0.101 P4SMA47 CDJ 42.30 51.70 1.0 38.1 1 6.2 67.8 0.101 P4SMA47A CEJ 44.70 49.40 1.0 40.2 1 6.4 64.8 0.101 P4SMA51 CFJ 45.90 56.10 1.0 41.3 1 5.7 73.5 0.102 P4SMA51A CGJ 48.50 53.60 1.0 43.6 1 6.0 70.1 0.102 P4SMA56 CHJ 50.40 61.60 1.0 45.4 1 5.2 80.5 0.103 P4SMA56A CKJ 53.20 58.80 1.0 47.8 1 5.4 77.0 0.103 P4SMA62 CLJ 55.8 68.2 1.0 50.2 1 4.7 89.0 0.104 P4SMA62A CMJ 58.9 65.1 1.0 53.0 1 5.0 85.0 0.104 2 Version: R2005

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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