Product Information

P4SMA15CA R3

P4SMA15CA R3 electronic component of Taiwan Semiconductor

Datasheet
Diode TVS Single Bi-Dir 12.8V 400W 2-Pin SMA T/R

Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1800: USD 0.1095 ea
Line Total: USD 197.1

0 - Global Stock
MOQ: 1800  Multiples: 1800
Pack Size: 1800
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1800
Multiples : 1800

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P4SMA15CA R3
Taiwan Semiconductor

1800 : USD 0.1095

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Polarity
Breakdown Voltage
Clamping Voltage
Packaging
Brand
Leakage Current Max
Peak Pulse Current
Operating Temperature Classification
Operating Temp Range
Number Of Elements
Mounting
Rad Hardened
Test Current It
Package Type
Reverse Stand-Off Voltage
Pin Count
Peak Pulse Power Dissipation
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P4SMA SERIES Taiwan Semiconductor CREAT BY ART Suface Mount Transient Voltage Suppressor FEATURES - Low profile package - Ideal for automated placement - Glass passivated junction - Built-in strain relief - Excellent clamping capability - Fast response time: Typically less than 1.0ps from 0 volt to BV min - Typical IR less than 1A above 10V - Moisture sensitivity level: level 1, per J-STD-020 - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition DO-214AC (SMA) MECHANICAL DATA Case: DO-214AC (SMA) Molding compound, UL flammability classification rating 94V-0 Base P/N with suffix on packing code - Green compound (halogen-free) Base P/N with prefix on packing code - AEC-Q101 qualified Terminal: Matte tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 1A whisker test with prefix on packing code meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 0.06 g (approximately) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (T =25 unless otherwise noted) A PARAMETER VALUE SYMBOL UNIT Peak power dissipation at T =25, tp=1ms(Note 1) P 400 Watts A PK Peak forward surge current, 8.3 ms single half sine-wave I 40 A FSM superimposed on rated load Maximum instantaneous forward voltage at 25 A for V 3.5 Volts F Unidirectional only O Operating junction temperature range T - 55 to +150 J C O Storage temperature range T - 55 to +150 STG C Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T =25 Per Fig. 2 A Devices for Bipolar Applications 1. For Bidrectional Use C or CA Suffix for Types P4SMA6.8 through Types P4SMA200A 2. Electrical Characterstics Apply in Both Directions ORDERING INFORMATION PART NO. AEC-Q101 PACKING CODE GREEN COMPOUND PACKAGE PACKING QUALIFIED CODE R3 SMA 1,800 / 7 Plastic reel R2 SMA 7,500 / 13 Paper reel M2 SMA 7,500 / 13 Plastic reel P4SMAxxxx Prefix Suffix (Note 1) F3 Folded SMA 1,800 / 7 Plastic reel F2 Folded SMA 7,500 / 13 Paper reel F4 Folded SMA 7,500 / 13 Plastic reel Note 1:xxx defines voltage from 6.8V (P4SMA6.8) to 200V (P4SMA200A) EXAMPLE AEC-Q101 GREEN PREFERRED P/N PACKING CODE DESCRIPTION PART NO. QUALIFIED COMPOUND P4SMA200A R3 R3 P4SMA200A P4SMA200A R3G R3 G Green compound P4SMA200A P4SMA200AHR3 HR3 AEC-Q101 qualified P4SMA200A Document Number: DS D1405054 Version: K14P4SMA SERIES Taiwan Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA=25 unless otherwise noted) FIG. 1 PEAK PULSE POWER RATING CURVE FIG.2 PULSE DERATING CURVE 100 125 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 100 10 75 50 1 25 0 0. 1 0 25 50 75 100 125 150 175 200 0. 1 1 10 100 1000 10000 o T , AMBIENT TEMPERATURE ( C) A tp, PULSE WIDTH, (us) FIG. 3 CLAMPING POWER PULSE WAVEFORM FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT UNIDIRECTIONAL ONLY PULSE WIDTH(td) is DEFINED 50 140 as the POINT WHERE the PEAK tr=10s CURRENT DECAYS to 50% OF IPPM 8.3ms Single Half Sine Wave 120 Peak Value 40 IPPM 100 Half Value-IPPM/2 30 80 10/1000s, WAVEFORM as DEFINED by R.E.A. 60 20 40 10 20 td 0 0 0 0.511.522.533.5 4 1 10 100 t, TIME ms NUMBER OF CYCLES AT 60 Hz FIG. 5 TYPICAL JUNCTION CAPACITANCE 100000 10000 VR=0 1000 MEASURED at STAND-OFF 100 VOLTAGE,Vwm f=1.0MHz Vsig=50mVp-p 10 1 10 100 V( ), BREAKDOWN VOLTAGE (V) BR Document Number: DS D1405054 Version: K14 PEAK PULSE CURRENT (%) P , PEAK PULSE POWER, KW CJ, JUNCTION CAPACITANCE (pF) A PPM IFSM, PEAK FORWARD SURGE CURRENT (A) PEAK PULSE POWER(P ) OR CURRENT (I ) A PP PP DERATING IN PERCENTAGE (%)

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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