Product Information

VND830ETR-E

VND830ETR-E electronic component of STMicroelectronics

Datasheet
Power Switch ICs - Power Distribution DBLE CH HI-SIDE DRVR

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1000: USD 1.4892 ea
Line Total: USD 1489.2

0 - Global Stock
MOQ: 1000  Multiples: 1000
Pack Size: 1000
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 10 May to Thu. 16 May

MOQ : 1000
Multiples : 1000

Stock Image

VND830ETR-E
STMicroelectronics

1000 : USD 2.7341

0 - WHS 2


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

VND830ETR-E
STMicroelectronics

1 : USD 7.759
10 : USD 2.636
100 : USD 2.1586
250 : USD 1.9397
500 : USD 1.8701
1000 : USD 1.5518

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Number of Outputs
On Resistance - Max
Operating Supply Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Type
Output Current
Series
Qualification
Packaging
Product
Brand
Moisture Sensitive
Pd - Power Dissipation
Factory Pack Quantity :
Supply Voltage - Max
Supply Voltage - Min
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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VND830E-E Double channel high-side driver Features Type R I V DS(on) OUT CC (1) (1) VND830E-E 65 m 9.5 A 36 V 1. Per each channel. Output current: 9.5 A CMOS compatible inputs On-state open-load detection Off-state open-load detection Description Output stuck to V detection CC Open drain status outputs The VND830E-E is a monolithic device made by using STMicroelectronics VIPower M0-3 Undervoltage shutdown technology. It is intended for driving resistive or Overvoltage clamp inductive loads with one side connected to Thermal shutdown ground. Current and power limitation Active V pin voltage clamp protects the device CC against low energy spikes (see ISO7637 transient Very low standby current compatibility table). Protection against loss of ground and loss of V The device detects open-load condition both in CC on-state and off-state. Output shorted to V is CC Reverse battery protection detected in the off-state. Very low electromagnetic susceptibility Output current limitation protects the device in Optimized electromagnetic emission overload condition. In case of long duration overload, the device limits the dissipated power to safe level up to thermal shutdown intervention. Thermal shutdown with automatic restart allows the device to recover normal operation as soon as fault condition disappears. Table 1. Device summary Order codes Package Tube Tape and reel SO-16L VND830E-E VND830ETR-E September 2013 Doc ID 17461 Rev 2 1/26 www.st.com 1VND830E-E Contents Contents 1 Block diagram and pin description . 5 2 Electrical specifications 6 2.1 Absolute maximum ratings . 6 2.2 Thermal data . 7 2.3 Electrical characteristics . 7 2.4 Electrical characteristics curves 13 3 Application information . 16 3.1 GND protection network against reverse battery . 16 3.1.1 Solution 1: a resistor in the ground line (RGND only) 16 3.1.2 Solution 2: a diode (D ) in the ground line 17 GND 3.2 Load dump protection 17 3.3 MCU I/O protection 17 3.4 Open-load detection in off-state 18 3.5 Maximum demagnetization energy . 19 4 Package and PCB thermal data . 20 4.1 SO-16L thermal data 20 5 Package and packing information . 23 5.1 ECOPACK packages . 23 6 Revision history . 25 Doc ID 17461 Rev 2 2/26

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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