Product Information

STTH3006DPI

STTH3006DPI electronic component of STMicroelectronics

Datasheet
Rectifiers 30 Amp 600 Volt
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 10.0532 ea
Line Total: USD 10.05

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STTH3006DPI
STMicroelectronics

1 : USD 10.0532
10 : USD 6.5762

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Type
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Height
Length
Product
Width
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

STTH3006DPI Tandem 600V HYPERFAST BOOST DIODE MAJOR PRODUCTS CHARACTERISTICS I 30 A F(AV) 12 V 600 V RRM Tj (max) 150 C V (max) 2.4 V F I (typ.) 6.7 A RM t (typ.) 25 ns rr 2 FEATURES AND BENEFITS 1 n ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING DOP3I CONDITIONS (insulated) n DESIGNED FOR HIGH dI /dt OPERATION. F HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DESCRIPTION DOWNSIZING OF MOSFET AND HEATSINKS The TURBOSWITCH H is an ultra high n INTERNAL CERAMIC INSULATED DEVICES performance diode composed of two 300V dice in WITH EQUAL THERMAL CONDITIONS FOR series. TURBOSWITCH H family drastically cuts BOTH 300V DIODES losses in the associated MOSFET when run at n INSULATION (2500V ) ALLOWS RMS high dI /dt. F PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. n STATIC AND DYNAMIC EQUILIBRIUM OF INTERNAL DIODES ARE WARRANTED BY DESIGN n PACKAGE CAPACITANCE: C=16pF ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit V 600 V RRM Repetitive peak reverse voltage I 32 A F(RMS) RMS forward current I 180 A FSM Surge non repetitive forward current tp = 10 ms sinusoidal Ipeak 50 A Peak current waveform = 0.15 Tc = 120C T -65 +150 C stg Storage temperature range Tj + 150 C Maximum operating junction temperature October 2003 - Ed: 2A 1/5STTH3006DPI THERMAL AND POWER DATA Symbol Parameter Test conditions Value Unit R 1.3 C/W th (j-c) Junction to case thermal resistance STATIC ELECTRICAL CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit I * 40 A R Reverse leakage current V =V Tj = 25C R RRM 60 400 Tj = 125C V ** 3.6 V F Forward voltage drop I = 30A Tj=25C F 1.95 2.4 Tj = 150C Pulse test : * tp = 100 ms, <2% ** tp = 380 s, <2% To evaluate the maximum conduction losses use the following equation : 2 P=1.7xI + 0.023 I F(AV) F (RMS) DYNAMIC CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit t 25 ns rr Reverse recovery I = 0.5 A Irr = 0.25 A Tj = 25C F time I =1A R 45 I =1A dI /dt=-50 A/s F F V =30V R I 6.7 8.5 A RM Reverse recovery V = 400 V I =30A Tj = 125C R F current dI /dt = -200 A/s F S 0.3 - Reverse recovery softness factor Q 145 nC rr Reverse recovery charges TURN-ON SWITCHING CHARACTERISTICS Symbol Parameter Tests Conditions Min. Typ. Max. Unit 400 ns t fr Forward recovery I =30A dI /dt = 100 A/s Tj = 25C F F time V =1.1xV max FR F V 6V FP Transient peak I =30A dI /dt = 100 A/s Tj = 25C F F forward recovery voltage 2/5

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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