Product Information

STTH3006PI

STTH3006PI electronic component of STMicroelectronics

Datasheet
Rectifiers Turbo 2 RECTIFIER Ultrafast Hi Vltg
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 2.735 ea
Line Total: USD 8.2

75 - Global Stock
Ships to you between
Tue. 21 May to Mon. 27 May
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
75 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 3
Multiples : 1

Stock Image

STTH3006PI
STMicroelectronics

3 : USD 3.0432
10 : USD 2.5914
100 : USD 2.5398
250 : USD 2.4483
600 : USD 2.3993

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Vr - Reverse Voltage
If - Forward Current
Configuration
Vf - Forward Voltage
Max Surge Current
Ir - Reverse Current
Recovery Time
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Product
Brand
Factory Pack Quantity :
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Additional Infomation About Product

STTH3006 Turbo 2 ultrafast high voltage rectifier Datasheet - production data Description The device is developed using ST s Turbo 2 600 V technology. It is well-suited as a boost diode, especially for use in continuous mode power factor corrections and hard switching conditions. This device is also intended for use as a free wheeling diode in power supplies and other power switching applications. Table 1: Device summary Symbol Value IF(AV) 30 A VRRM 600 V Features VF (typ.) 1.10 V Ultrafast switching T 175 C j Low reverse current Low thermal resistance trr (max) 50 ns Reduces switching and conduction losses Insulated package: DOP3I Insulating voltage = 2500 VRMS sine May 2017 DocID12368 Rev 4 1/12 www.st.com This is information on a product in full production. Characteristics STTH3006 1 Characteristics Table 2: Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit VRRM Repetitive peak reverse voltage 600 V I Forward rms current 50 A F(RMS) DO-247 TC = 115 C Average forward current, IF(AV) 30 A = 0.5 square wave DOP3I TC = 85 C IFSM Surge non repetitive forward current tp = 10 ms sinusoidal 300 A T Storage temperature range -65 to +175 C stg Tj Maximum operating junction temperature 175 C Table 3: Thermal parameters Symbol Parameter Max. value Unit DO-247 1.1 Junction to case Rth(j-c) C/W DOP3I 1.7 Table 4: Static electrical characteristics Symbol Parameter Test conditions Min. Typ. Max. Unit T = 25 C - 25 j (1) IR Reverse leakage current VR = VRRM A Tj = 150 C - 80 800 T = 25 C - 1.85 j (2) VF Forward voltage drop IF = 30 A V Tj = 150 C - 1.10 1.40 Notes: (1) Pulse test: tp = 5 ms, < 2% (2) Pulse test: t = 380 s, < 2% p To evaluate the conduction losses, use the following equation: 2 P = 1.07 x I + 0.011 x I F(AV) F (RMS) 2/12 DocID12368 Rev 4

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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