Product Information

STTH3010WY

STTH3010WY electronic component of STMicroelectronics

Datasheet
STMicroelectronics Diodes - General Purpose, Power, Switching Ultrafast Recovery 30A 1000V 1.30VF

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 2.9907 ea
Line Total: USD 1794.42

0 - Global Stock
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Tue. 21 May to Mon. 27 May

MOQ : 600
Multiples : 1

Stock Image

STTH3010WY
STMicroelectronics

600 : USD 2.8561
1000 : USD 2.8275
2000 : USD 2.7989
2500 : USD 2.7716
3000 : USD 2.743
4000 : USD 2.7157
5000 : USD 2.6884
10000 : USD 2.6624
20000 : USD 2.6351
50000 : USD 2.6091

0 - WHS 2


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STTH3010WY
STMicroelectronics

1 : USD 8.6294
10 : USD 3.1135
100 : USD 2.5465
500 : USD 2.1685
1000 : USD 1.8204

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
If - Forward Current
Configuration
Recovery Time
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Subcategory
Taric
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STTH3010-Y Automotive ultrafast recovery - high voltage diode Datasheet production data Features AEC-Q101 qualified A K Ultrafast soft recovery Very low conduction and switching losses K High frequency and/or high pulsed current operation A High reverse voltage capability NC High junction temperature 2 D PAK STTH3010GY ECOPACK 2 compliant component (STTH3010WY) Description A The high quality design of this diode has K produced a device with low leakage current, DO-247 regularly reproducible characteristics and intrinsic STTH3010WY ruggedness. These characteristics make it ideal for heavy duty applications that demand long term reliability like automotive applications. Table 1. Device summary The improved performance in low leakage current, and therefore thermal runaway guard I 30 A F(AV) band, is an immediate competitive advantage for V 1000 V RRM this device. T 175 C j V (typ) 1.30 V F t (typ) 42 ns rr June 2012 Doc ID 018923 Rev 1 1/9 This is information on a product in full production. www.st.com 9Characteristics STTH3010-Y 1 Characteristics Table 2. Absolute ratings (limiting values at 25 C, unless otherwise specified) Symbol Parameter Value Unit V Repetitive peak reverse voltage 1000 V RRM I Forward rms current 50 A F(RMS) DO-247 T = 105 C c I Average forward current, = 0.5 30 A F(AV) 2 D PAK T = 105 C c I Repetitive peak forward current t = 5 s, F = 5 kHz square 300 A FRM p I Surge non repetitive forward current t = 10 ms Sinusoidal 180 A FSM p T Storage temperature range -65 to +175 C stg T Operating junction temperature range -40 to +175 C j Table 3. Thermal parameters Symbol Parameter Value Unit DO-247 R Junction to case 1.1 C/W th(j-c) 2 D PAK Table 4. Static electrical characteristics Symbol Parameter Test conditions Min. Typ Max. Unit T = 25 C 15 j (1) I Reverse leakage current V = V A R R RRM T = 125 C 10 100 j T = 25 C 2 j (2) V Forward voltage drop T = 100 C I = 30 A 1.4 1.8 V F j F T = 150 C 1.3 1.7 j 1. Pulse test: t = 5 ms, < 2% p 2. Pulse test: t = 380 s, < 2% p To evaluate the conduction losses use the following equation: 2 P = 1.3 x I + 0.013 I F(AV) F (RMS) 2/9 Doc ID 018923 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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