STQ1HN60K3-AP

STQ1HN60K3-AP N-channel 600 V, 6.7 typ., 0.4 A SuperMESH3 Power MOSFET in a TO-92 package Datasheet production data Features R DS(on) Order code V I P DS D TOT max STQ1HN60K3-AP 600 V 8 0.4 A 3 W 100% avalanche tested 3 2 Extremely high dv/dt capability 1 Gate charge minimized TO-92 Very low intrinsic capacitance Improved diode reverse recovery characteristics Zener-protected Figure 1. Internal schematic diagram Applications D(2) Switching applications Description G(1) This SuperMESH3 Power MOSFET is the result of improvements applied to STMicroelectronics SuperMESH technology, combined with a new optimized vertical structure. This device boasts an extremely low on- resistance, superior dynamic performance and high avalanche capability, rendering it suitable for S(3) AM01476v1 the most demanding applications. Table 1. Device summary Order code Marking Package Packaging STQ1HN60K3-AP 1HN60K3 TO-92 Ammopack April 2013 DocID024427 Rev 1 1/14 This is information on a product in full production. www.st.com 14Contents STQ1HN60K3-AP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 9 4 Package mechanical data 10 5 Revision history . 13 2/14 DocID024427 Rev 1