Product Information

STP80NF70

STP80NF70 electronic component of STMicroelectronics

Datasheet
MOSFET N-Ch 68V 0.0082 Ohm 98 A STripFET II
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.2716 ea
Line Total: USD 1.27

169 - Global Stock
Ships to you between
Wed. 29 May to Mon. 03 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
104 - WHS 1


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STP80NF70
STMicroelectronics

1 : USD 1.259
10 : USD 1.0676
30 : USD 0.963
100 : USD 0.844
500 : USD 0.7917
1000 : USD 0.7675

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Category
Brand Category
LoadingGif

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Additional Infomation About Product

STP80NF70 N-channel 68 V, 0.0082 , 98 A, TO-220 STripFET II Power MOSFET Features R DS(on) Type V I DSS D max STP80NF70 68 V < 0.0098 98 A Exceptional dv/dt capability 3 100% avalanche tested 2 1 TO-220 Application Switching applications Description The STP80NF70 is a N-channel Power MOSFET Figure 1. Internal schematic diagram realized with STMicroelectronics unique STripFET process. It has specifically been designed to minimize input capacitance and gate OR 4 charge. The device is therefore suitable in advanced high-efficiency switching applications. 3 3 Table 1. Device summary Order code Marking Package Packaging STP80NF70 80NF70 TO-220 Tube June 2010 Doc ID 17610 Rev 1 1/13 www.st.com 13Contents STP80NF70 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits . 9 4 Package mechanical data 10 5 Revision history . 12 2/13 Doc ID 17610 Rev 1

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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