Product Information

STQ1NE10L-AP

STQ1NE10L-AP electronic component of STMicroelectronics

MOSFET
STQ1NE10L-AP is an N-channel enhancement-mode MOSFET from STMicroelectronics.
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2000: USD 0.351 ea
Line Total: USD 702

0 - Global Stock
MOQ: 2000  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 2000
Multiples : 1

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STQ1NE10L-AP
STMicroelectronics

2000 : USD 0.351
2000 : USD 0.351
2000 : USD 0.3393
4000 : USD 0.3335
8000 : USD 0.3276
18000 : USD 0.3276

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
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Additional Infomation About Product

STQ1NE10L-AP is a low-side power MOSFET transistor manufactured by STMicroelectronics. It is designed for low-voltage, low-power applications, such as portable devices and automotive applications. The part features a high blocking voltage of 55 volts, a continuous drain current of 8 A, and a maximum power dissipation of 2.9 W. This transistor has low on-resistance and minimal leakage current, making it well-suited for power switching applications.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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