Product Information

STP4NK80ZFP

STP4NK80ZFP electronic component of STMicroelectronics

Datasheet
Transistor: N-MOSFET; unipolar; 800V; 1.89A; 25W; TO220FP
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 0.6907 ea
Line Total: USD 8.98

1059 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 13  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
334 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 28
Multiples : 1

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STP4NK80ZFP
STMicroelectronics

28 : USD 1.1505
40 : USD 1.1505
150 : USD 1.1505
500 : USD 1.1505
2000 : USD 1.1505

169 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 175
Multiples : 1

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STP4NK80ZFP
STMicroelectronics

175 : USD 0.6421

23 - WHS 3


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STP4NK80ZFP
STMicroelectronics

1 : USD 1.357
10 : USD 1.0847
30 : USD 0.8719
100 : USD 0.821
500 : USD 0.7978
1000 : USD 0.7879

75 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

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STP4NK80ZFP
STMicroelectronics

1 : USD 1.287
3 : USD 1.157
10 : USD 1.027
19 : USD 0.884
51 : USD 0.832

1059 - WHS 5


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 13
Multiples : 1

Stock Image

STP4NK80ZFP
STMicroelectronics

13 : USD 0.6907
100 : USD 0.4983
500 : USD 0.4882

Read More Specifications

     
Manufacturer
Product Category
Technology
Kind Of Package
Mounting
Case
Polarisation
Features Of Semiconductor Devices
Type Of Transistor
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Power Dissipation
Category
Brand Category
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Additional Infomation About Product

STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 N-channel 800V - 3 - 3A - TO-220/TO-220FP/DPAK/IPAK Zener - Protected SuperMESH MOSFET General features V DSS Type R I DS(on) D ( Tjmax) 3 2 STP4NK80Z 800 V < 3.5 3 A 1 STP4NK80ZFP 800 V < 3.5 3 A TO-220 TO-220FP STD4NK80Z 800 V < 3.5 3 A STD4NK80Z-1 800 V < 3.5 3 A Extremely high dv/dt capability 3 3 2 1 1 100% avalanche tested DPAK IPAK Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatibility Internal schematic diagram Description The SuperMESH series is obtained through an extreme optimization of STs well established strip-based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products. Applications Switching application Order codes Part number Marking Package Packaging STP4NK80Z P4NK80Z TO-220 Tube STP4NK80ZFP P4NK80ZFP TO-220FP Tube STD4NK80ZT4 D4NK80Z DPAK Tape & reel STD4NK80Z-1 D4NK80Z IPAK Tube August 2006 Rev 8 1/18 www.st.com 18Contents STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Contents 1 Electrical ratings 3 1.1 Protection features of gate-to-source zener diodes 4 2 Electrical characteristics . 5 2.1 Electrical characteristics (curves) 7 3 Test circuit . 10 4 Package mechanical data 11 5 Packaging mechanical data 16 6 Revision history . 17 2/18

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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