Product Information

STP7N65M2

STP7N65M2 electronic component of STMicroelectronics

Datasheet
STMicroelectronics MOSFET
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

9: USD 0.8673 ea
Line Total: USD 7.81

970 - Global Stock
Ships to you between
Wed. 22 May to Tue. 28 May
MOQ: 9  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
970 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

STP7N65M2
STMicroelectronics

1 : USD 0.8673

970 - WHS 2


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 9
Multiples : 1

Stock Image

STP7N65M2
STMicroelectronics

9 : USD 0.8673

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Vgs - Gate-Source Voltage
Qg - Gate Charge
Tradename
Series
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Product
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STP7N65M2, STU7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Datasheet - production data Features TAB R DS(on) Order code V I DS D max STP7N65M2 650 V 1.15 5 A 3 2 STU7N65M2 650 V 1.15 5 A TAB 1 TO-220 Extremely low gate charge 3 2 Excellent output capacitance (C ) profile IPAK oss 1 100% avalanche tested Zener-protected Applications Figure 1: Internal schematic diagram Switching applications D(2, TAB) Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to the strip layout associated with an G(1) improved vertical structure, the device exhibits both low on-resistance and optimized switching characteristics. It is therefore suitable for the most demanding high efficiency converters. S(3) AM01476v1 tab Table 1: Device summary Order code Marking Package Packaging STP7N65M2 7N65M2 TO-220 Tube STU7N65M2 7N65M2 IPAK Tube May 2015 DocID026788 Rev 3 1/18 www.st.com This is information on a product in full production. Contents STP7N65M2, STU7N65M2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 9 4 Package information ..................................................................... 10 4.1 TO-220 type A package information ................................................ 11 4.2 IPAK(TO-251) type A package information ..................................... 13 4.3 IPAK (TO-251) type C package information .................................... 15 5 Revision history ............................................................................ 17 2/18 DocID026788 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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