Product Information

STP80N70F4

Name: STP80N70F4
Brand: STMicroelectronics
SKU: STP80N70F4_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STP80N70F4 electronic component of STMicroelectronics

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Datasheet

MOSFET N-channel 68 V, 8.2 mOhm typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

N/A

Obsolete

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 MOQ : 1 Multiples : 1 STP80N70F4 STMicroelectronics	1 : USD 3.6764 10 : USD 1.3053 100 : USD 0.9373 500 : USD 0.7943 1000 : USD 0.6379 5000 : USD 0.5799 10000 : USD 0.553 25000 : USD 0.5364		N/A Obsolete

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Additional Infomation About Product

STP80N70F4 N-channel 68 V, 8.2 m typ., 85 A STripFET DeepGATE Power MOSFET in TO-220 package Datasheet production data Features Order code V R max I DSS DS(on) D STP80N70F4 68 V < 9.8 m 85 A N-channel enhancement mode 3 100% avalanched rated 2 1 Low gate charge TO-220 Very low on-resistance Application Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using STs STripFET DeepGATE technology. The device has a new gate structure and is specially designed to minimize on-state resistance to provide superior switching performance. 3 - V Table 1. Device summary Order code Marking Package Packaging STP80N70F4 80N70F4 TO-220 Tube December 2012 Doc ID 18377 Rev 2 1/12 This is information on a product in full production. www.st.com 12Contents STP80N70F4 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 8 4 Package mechanical data . 9 5 Revision history . 11 2/12 Doc ID 18377 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 85 A 85 A
Vds - Drain-Source Breakdown Voltage 68 V 68 V
Rds On - Drain-Source Resistance 8.2 mOhms 8.2 mOhms
Transistor Polarity N - Channel N - Channel
Vgs th - Gate-Source Threshold Voltage 2 V 2 V
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Pd - Power Dissipation 150 W 150 W
Mounting Style Through Hole Through Hole
Package / Case TO - 220 - 3 TO - 220 - 3
Technology Si Si
Number of Channels 1 Channel 1 Channel
Vgs - Gate-Source Voltage 20 V 20 V
Qg - Gate Charge 90 nC 90 nC
Channel Mode Enhancement Enhancement
Series N - Channel Stripfet N - Channel Stripfet
Transistor Type 1 N - Channel 1 N - Channel
Brand Stmicroelectronics Stmicroelectronics
Configuration Single Single
Cnhts 8541290000 8541290000
Fall Time 25 ns 25 ns
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Mosfet Mosfet
Rise Time 36 ns 36 ns
Subcategory Mosfets Mosfets
Taric 8541290000 8541290000
Typical Turn-Off Delay Time 80 ns 80 ns
Typical Turn-On Delay Time 25 ns 25 ns