Product Information

STGWA25H120DF2

STGWA25H120DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

41: USD 3.0046 ea
Line Total: USD 123.19

28518 - Global Stock
Ships to you between
Tue. 14 May to Fri. 17 May
MOQ: 41  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
28518 - Warehouse 1


Ships to you between
Tue. 14 May to Fri. 17 May

MOQ : 41
Multiples : 1

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STGWA25H120DF2
STMicroelectronics

41 : USD 3.0046

Read More Specifications

     
Manufacturer
Product Category
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif

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Additional Infomation About Product

STGW25H120DF2, STGWA25H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Features Maximum junction temperature: T = 175 C J High speed switching series Minimized tail current 3 V = 2.1 V (typ.) I = 25 A CE(sat) C 2 3 1 2 1 5 s minimum short circuit withstand time at T = 150 C J TO-247 TO-247 long leads Safe paralleling Low thermal resistance Very fast recovery antiparallel diode Applications Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status links STGW25H120DF2 STGWA25H120DF2 Product summary Order code STGW25H120DF2 Marking G25H120DF2 Package TO-247 Packing Tube Order code STGWA25H120DF2 Marking G25H120DF2 Package TO-247 long leads Packing Tube DS9297 - Rev 5 - March 2021 www.st.com For further information contact your local STMicroelectronics sales office.STGW25H120DF2, STGWA25H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 50 C I A C Continuous collector current at T = 100 C 25 C (1) I Pulsed collector current 100 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage (t 10 s, D 0.01) 30 p Continuous forward current at T = 25 C 50 C I A F Continuous forward current at T = 100 C 25 C (1) I Pulsed forward current 100 A FP P Total power dissipation at T = 25 C 375 W TOT C T Operating junction temperature range - 55 to 175 C J T Storage temperature range - 55 to 150 C STG 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance, junction-to-case IGBT 0.4 R C/W thJC Thermal resistance, junction-to-case diode 1.47 R Thermal resistance, junction-to-ambient 50 C/W thJA DS9297 - Rev 5 page 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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