Product Information

STGWT20IH125DF

STGWT20IH125DF electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors 1250V 20A trench gte field-stop IGBT

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 2.2131 ea
Line Total: USD 1327.86

0 - Global Stock
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 600
Multiples : 1

Stock Image

STGWT20IH125DF
STMicroelectronics

600 : USD 2.873
1000 : USD 2.8444
2000 : USD 2.8158
2500 : USD 2.7885
3000 : USD 2.7599
4000 : USD 2.7326
5000 : USD 2.7053
10000 : USD 2.678
20000 : USD 2.652
50000 : USD 2.6247

0 - WHS 2


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWT20IH125DF
STMicroelectronics

1 : USD 3.893
10 : USD 3.7894
30 : USD 3.7217
100 : USD 3.6526
500 : USD 3.6526

0 - WHS 3


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1

Stock Image

STGWT20IH125DF
STMicroelectronics

1 : USD 9.6699
10 : USD 3.4833
25 : USD 3.291

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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STGW20IH125DF STGWT20IH125DF 1250 V, 20 A IH series trench gate field-stop IGBT Datasheet - production data Features TAB Designed for soft commutation only Maximum junction temperature: T = 175 C J Minimized tail current V = 2.0 V (typ.) I = 15 A CE(sat) C 3 2 Tight parameters distribution 3 1 2 Safe paralleling 1 Very low V soft recovery co-packaged diode F TO-247 TO-3P Low thermal resistance Lead free package Applications Figure 1. Internal schematic diagram Induction heating C (2, TAB) Microwave oven Resonant converters Description These IGBTs are developed using an advanced G (1) proprietary trench gate field-stop structure and performance is optimized in both conduction and switching losses. A freewheeling diode with a low drop forward voltage is co-packaged. The result is a product specifically designed to maximize E (3) efficiency for any resonant and soft-switching application. Table 1. Device summary Order code Marking Package Packaging STGW20IH125DF G20IH125DF TO-247 Tube STGWT20IH125DF G20IH125DF TO-3P Tube February 2014 DocID025269 Rev 2 1/17 This is information on a product in full production. www.st.com 17Contents STGW20IH125DF, STGWT20IH125DF Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 11 4 Package mechanical data 12 5 Revision history . 16 2/17 DocID025269 Rev 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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