Product Information

STGWA25S120DF3

STGWA25S120DF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

13: USD 2.8161 ea
Line Total: USD 36.61

0 - Global Stock
MOQ: 13  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

STGWA25S120DF3
STMicroelectronics

1 : USD 8.4869
10 : USD 5.5509
25 : USD 5.3127
100 : USD 4.681
600 : USD 4.0907
3000 : USD 3.7593

0 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 13
Multiples : 1

Stock Image

STGWA25S120DF3
STMicroelectronics

13 : USD 2.8161

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.6 V (typ.) I = 25 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 Applications 2 ORQJ OHDGV 7 Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW25S120DF3 G25S120DF3 TO-247 Tube STGWA25S120DF3 G25S120DF3 TO-247 long leads Tube December 2014 DocID026374 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW25S120DF3, STGWA25S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 12 4 Package information 13 4.1 TO-247, STGW25S120DF3 . 13 4.2 TO-247 long leads, STGWA25S120DF3 . 15 5 Revision history . 17 2/18 DocID026374 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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