Product Information

STGWA40H65DFB2

STGWA40H65DFB2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

51: USD 2.3868 ea
Line Total: USD 121.73

20922 - Global Stock
Ships to you between
Wed. 15 May to Mon. 20 May
MOQ: 51  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
20922 - WHS 1


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 51
Multiples : 1

Stock Image

STGWA40H65DFB2
STMicroelectronics

51 : USD 2.3868

137 - WHS 2


Ships to you between
Wed. 15 May to Mon. 20 May

MOQ : 1
Multiples : 1

Stock Image

STGWA40H65DFB2
STMicroelectronics

1 : USD 4.3898
10 : USD 3.878
30 : USD 3.567
90 : USD 3.305

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

The STGWA40H65DFB2 is an IGBT Transistor Trench gate field-stop 650 V 40 A high-speed HB2 series IGBT in a TO-247 long leads package manufactured by STMicroelectronics. The Transistor is equipped with STMicroelectronics high-performance IGBT technology with a high blocking voltage rating of 650 V and a high current rating of 40 A, making it suitable for a vast range of applications, from micro-inverters to telecom, DC-DC converters. This Transistor also offers high switching speed performance and low gate drive power consumption. It is made from insulated gate bipolar transistors which deliver maximum efficiency and reliability. Additionally, its large junction area allows better heat dissipation and superior performance at high frequencies. The long leads package is designed for easy installation in cramped work-environments, while the RoHS compliant product guarantees environmental friendliness.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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