Product Information

STGWA50M65DF2

STGWA50M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 50 A low loss

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 2.6898 ea
Line Total: USD 1613.88

0 - Global Stock
MOQ: 600  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 600
Multiples : 1

Stock Image

STGWA50M65DF2
STMicroelectronics

600 : USD 4.6384
1000 : USD 4.5929
2000 : USD 4.5461
2500 : USD 4.5006
3000 : USD 4.4564
4000 : USD 4.4109
5000 : USD 4.3667
10000 : USD 4.3238
20000 : USD 4.2809
50000 : USD 4.238

0 - WHS 2


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

STGWA50M65DF2
STMicroelectronics

1 : USD 6.5076
10 : USD 4.2564
25 : USD 4.0285
100 : USD 3.49
600 : USD 2.9722

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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STGWA50M65DF2 Trench gate field-stop IGBT, M series 650 V, 50 A low-loss in a TO-247 long leads package Datasheet - production data Features 6 s of minimum short-circuit withstand time V = 1.65 V (typ.) I = 50 A CE(sat) C Tight parameters distribution Safer paralleling Positive V temperature coefficient CE(sat) Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 C Applications Motor control UPS Figure 1: Internal schematic diagram PFC C (2) General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series G (1) IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling Sc12850 no tab E (3) operation. Table 1: Device summary Order code Marking Package Packing STGWA50M65DF2 G50M65DF2 TO-247 long leads Tube May 2017 DocID028694 Rev 3 1/16 www.st.com This is information on a product in full production. Contents STGWA50M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package mechanical data ............................................................. 13 4.1 Package information ....................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID028694 Rev 3

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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