Product Information

STGW8M120DF3

STGW8M120DF3 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series 1200 V 8 A low loss
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.9558 ea
Line Total: USD 1.96

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 1
Multiples : 1

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STGW8M120DF3
STMicroelectronics

1 : USD 1.9558

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

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STGW8M120DF3
STMicroelectronics

1 : USD 6.4506
10 : USD 4.215

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Product Type
Factory Pack Quantity :
Subcategory
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Additional Infomation About Product

STGW8M120DF3, STGWA8M120DF3 Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss Datasheet - production data Features 10 s of short-circuit withstand time V = 1.85 V (typ.) I = 8 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications Industrial drives UPS Solar Welding Figure 1: Internal schematic diagram Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive V temperature coefficient and tight CE(sat) parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGW8M120DF3 TO-247 G8M120DF3 Tube STGWA8M120DF3 TO-247 long leads October 2017 DocID029337 Rev 3 1/17 www.st.com This is information on a product in full production. Contents STGW8M120DF3, STGWA8M120DF3 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 5 Revision history ............................................................................ 16 2/17 DocID029337 Rev 3

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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