Product Information

STGW25M120DF3

STGW25M120DF3 electronic component of STMicroelectronics

Datasheet
STMicroelectronics IGBT Transistors
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

5: USD 8.6914 ea
Line Total: USD 43.46

582 - Global Stock
Ships to you between
Fri. 17 May to Thu. 23 May
MOQ: 5  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
23 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGW25M120DF3
STMicroelectronics

1 : USD 7.18
10 : USD 6.3049
30 : USD 5.7715
90 : USD 5.3249

582 - WHS 2


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 5
Multiples : 1

Stock Image

STGW25M120DF3
STMicroelectronics

5 : USD 8.6914
10 : USD 6.3384
50 : USD 5.6178
100 : USD 5.2795
200 : USD 4.8587
500 : USD 4.8235

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Additional Infomation About Product

STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package Features Maximum junction temperature: T = 175 C J 10 s of short-circuit withstand time Low V = 1.85 V (typ.) I = 25 A CE(sat) C Tight parameter distribution 3 2 Positive V temperature coefficient CE(sat) 1 Low thermal resistance TO-247 Soft- and fast-recovery antiparallel diode C(2, TAB) Applications Industrial drives UPS G(1) Solar Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate field- stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive V CE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGW25M120DF3 Product summary Order code STGW25M120DF3 Marking G25M120DF3 Package TO-247 Packing Tube DS10300 - Rev 4 - November 2019 www.st.com For further information contact your local STMicroelectronics sales office.STGW25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 1200 V CES GE Continuous collector current at T = 25 C 50 A C I C Continuous collector current at T = 100 C 25 A C (1) I Pulsed collector current 100 A CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 V Continuous forward current at T = 25 C 50 A C I F Continuous forward current at T = 100 C 25 A C (1) I Pulsed forward current 100 A FP P Total power dissipation at T = 25 C 375 W TOT C T Storage temperature range -55 to 150 C STG T Operating junction temperature range -55 to 175 C J 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit Thermal resistance junction-case IGBT 0.4 C/W R thJC Thermal resistance junction-case diode 0.96 C/W R Thermal resistance junction-ambient 50 C/W thJA DS10300 - Rev 4 page 2/16

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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