X-On Electronics has gained recognition as a prominent supplier of STGW30H60DFB igbt transistors across the USA, India, Europe, Australia, and various other global locations. STGW30H60DFB igbt transistors are a product manufactured by STMicroelectronics. We provide cost-effective solutions for igbt transistors, ensuring timely deliveries around the world.

STGW30H60DFB

STGW30H60DFB electronic component of STMicroelectronics
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Part No.STGW30H60DFB
Manufacturer: STMicroelectronics
Category:IGBT Transistors
Description: STMicroelectronics IGBT Transistors
Datasheet: STGW30H60DFB Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 4.4772 ea
Line Total: USD 4.48

Availability - 582
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
582 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 4.4772
10 : USD 4.2757
25 : USD 3.484
60 : USD 3.0693
120 : USD 2.7391
270 : USD 2.119

163 - WHS 2


Ships to you between
Thu. 06 Jun to Tue. 11 Jun

MOQ : 1
Multiples : 1
1 : USD 5.3249
10 : USD 4.6483
30 : USD 4.2438
100 : USD 3.8374
500 : USD 3.65
1000 : USD 3.5651

23 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 1
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1 : USD 4.654
3 : USD 4.186
6 : USD 3.237
15 : USD 3.055

465 - WHS 4


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 9
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9 : USD 4.68
13 : USD 3.315
50 : USD 2.7787
100 : USD 2.6325
200 : USD 2.6162

582 - WHS 5


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 4
Multiples : 1
4 : USD 4.0063
10 : USD 3.8499
25 : USD 3.2565
60 : USD 2.9279
120 : USD 2.6577
270 : USD 2.2602

582 - WHS 6


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 4
Multiples : 1
4 : USD 4.4772
10 : USD 4.2757
25 : USD 3.484
60 : USD 3.0693
120 : USD 2.7391
270 : USD 2.119

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Configuration
Collector- Emitter Voltage VCEO Max
Collector-Emitter Saturation Voltage
Maximum Gate Emitter Voltage
Continuous Collector Current at 25 C
Gate-Emitter Leakage Current
Package / Case
Packaging
Technology
Mounting Style
Technology
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Series
Continuous Collector Current Ic Max
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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We proudly offer the STGW30H60DFB IGBT Transistors at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the STGW30H60DFB IGBT Transistors.

STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Datasheet Trench gate field-stop 600 V, 30 A high speed HB series IGBT Features Maximum junction temperature: T = 175 C J 3 3 High speed switching series 2 2 1 1 Minimized tail current TO-247 TO-247 long leads Low saturation voltage: V = 1.55 V (typ.) I = 30 A CE(sat) C TAB Tight parameter distribution Safe paralleling 3 2 1 Positive V temperature coefficient TO-3P CE(sat) Low thermal resistance Very fast soft recovery antiparallel diode Applications Photovoltaic inverters High frequency converters Description These devices are IGBTs developed using an advanced proprietary trench gate field- stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V temperature coefficient and very tight parameter distribution result in safer CE(sat) paralleling operation. Product status link STGW30H60DFB STGWA30H60DFB STGWT30H60DFB DS10467 - Rev 4 - May 2019 www.st.com For further information contact your local STMicroelectronics sales office. STGW30H60DFB, STGWA30H60DFB, STGWT30H60DFB Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter Value Unit V Collector-emitter voltage (V = 0 V) 600 V CES GE Continuous collector current at T = 25 C 60 C I C Continuous collector current at T = 100 C 30 A C (1) I Pulsed collector current 120 CP Gate-emitter voltage 20 V V GE Transient gate-emitter voltage 30 Continuous forward current at T = 25 C 60 C I F Continuous forward current at T = 100 C 30 A C (1) I Pulsed forward current 120 FP P Total power dissipation at T = 25 C 260 W TOT C T Storage temperature range - 55 to 150 STG C T Operating junction temperature range - 55 to 175 J 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol Parameter Value Unit R Thermal resistance junction-case IGBT 0.58 thJC R Thermal resistance junction-case diode 2.08 C/W thJC R Thermal resistance junction-ambient 50 thJA DS10467 - Rev 4 page 2/21

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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