Product Information

STGW25S120DF3

Name: STGW25S120DF3
Brand: STMicroelectronics
SKU: STGW25S120DF3_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STGW25S120DF3 electronic component of STMicroelectronics

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Datasheet

STMicroelectronics IGBT Transistors

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 10.095 ea
Line Total: USD 10.1

0 - Global Stock

MOQ: 1 Multiples: 1
Pack Size: 1

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 30 May to Mon. 03 Jun MOQ : 1 Multiples : 1 STGW25S120DF3 STMicroelectronics	1 : USD 10.095 10 : USD 8.7723 25 : USD 8.3663 100 : USD 7.2658 600 : USD 6.3255 1200 : USD 6.1545

0 - WHS 2 Ships to you between Fri. 24 May to Thu. 30 May MOQ : 3 Multiples : 1 STGW25S120DF3 STMicroelectronics	3 : USD 12.4147

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Additional Infomation About Product

STGW25S120DF3, STGWA25S120DF3 Trench gate field-stop IGBT, S series 1200 V, 25 A low drop Datasheet - production data Features 10 s of short-circuit withstand time V = 1.6 V (typ.) I = 25 A CE(sat) C Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode 2 7 Applications 2 ORQJ OHDGV 7 Industrial drives UPS Figure 1. Internal schematic diagram Solar % 7 & RU Welding Description This device is an IGBT developed using an advanced proprietary trench gate field-stop * structure. The device is part of the S series of 1200 V IGBTs which is tailored to maximize efficiency of low frequency industrial systems. Furthermore, a positive V temperature CE(sat) coefficient and tight parameter distribution result in safer paralleling operation. ( Table 1. Device summary Order code Marking Package Packing STGW25S120DF3 G25S120DF3 TO-247 Tube STGWA25S120DF3 G25S120DF3 TO-247 long leads Tube December 2014 DocID026374 Rev 2 1/18 This is information on a product in full production. www.st.comContents STGW25S120DF3, STGWA25S120DF3 Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuits 12 4 Package information 13 4.1 TO-247, STGW25S120DF3 . 13 4.2 TO-247 long leads, STGWA25S120DF3 . 15 5 Revision history . 17 2/18 DocID026374 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category IGBT Transistors IGBT Transistors
RoHS - XON Y Y
Configuration Single Single
Collector- Emitter Voltage VCEO Max 1.2 kV 1.2 kV
Collector-Emitter Saturation Voltage 1.6 V 1.6 V
Maximum Gate Emitter Voltage +/- 20 V +/- 20 V
Continuous Collector Current at 25 C 50 A 50 A
Gate-Emitter Leakage Current 250 nA 250 nA
Package / Case TO 247 - 3 TO 247 - 3
Packaging Tube Tube
Technology Si Si
Mounting Style Through Hole Through Hole
Technology Si Si
Pd - Power Dissipation 375 W 375 W
Minimum Operating Temperature - 55 C - 55 C
Maximum Operating Temperature + 175 C + 175 C
Series 900 - 1300V Igbts 900 - 1300V Igbts
Continuous Collector Current Ic Max 25 A 25 A
Brand Stmicroelectronics Stmicroelectronics
Cnhts 8541290000 8541290000
Hts Code 8541290095 8541290095
Mxhts 85412999 85412999
Product Type Igbt Transistors Igbt Transistors
Factory Pack Quantity : 600 600
Subcategory Igbts Igbts
Taric 8541290000 8541290000