Product Information

STD12N50DM2

STD12N50DM2 electronic component of STMicroelectronics

Datasheet
MOSFET PTD HIGH VOLTAGE
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 5.204 ea
Line Total: USD 5.2

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

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Availability Price Quantity
0 - WHS 1


Ships to you between Mon. 27 May to Wed. 29 May

MOQ : 1
Multiples : 1

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STD12N50DM2
STMicroelectronics

1 : USD 5.204
10 : USD 1.8744
25 : USD 1.7709

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Tradename
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Development Kit
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Series
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif

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Additional Infomation About Product

STD12N50DM2 N-channel 500 V, 0.299 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) D STD12N50DM2 500 V 0.350 11 A Fast-recovery body diode Extremely low gate charge and input capacitance Low on-resistance 100% avalanche tested Figure 1: Internal schematic diagram Extremely high dv/dt ruggedness Zener-protected Applications Switching applications Description This high voltage N-channel Power MOSFET is part of the MDmesh DM2 fast recovery diode series. It offers very low recovery charge and time (Qrr, trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shift converters. Table 1: Device summary Order code Marking Package Packing STD12N50DM2 12N50DM2 DPAK Tape and reel March 2016 DocID026806 Rev 2 1/16 www.st.com This is information on a product in full production. Contents STD12N50DM2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 4.1 DPAK package information ............................................................. 10 4.2 Packing information ......................................................................... 13 5 Revision history ............................................................................ 15 2/16 DocID026806 Rev 2

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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