Product Information

STB11NM60FDT4

Name: STB11NM60FDT4
Brand: STMicroelectronics
SKU: STB11NM60FDT4_STMicroelectronics
Availability: OutOfStock
Rating: 5 (11 reviews)

STB11NM60FDT4 electronic component of STMicroelectronics

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Datasheet

MOSFET N-Ch 600 Volt 11 Amp

Manufacturer: STMicroelectronics

This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1000: USD 2.468 ea
Line Total: USD 2468

0 - Global Stock

MOQ: 1000 Multiples: 1000
Pack Size: 1000

More Buying Options & Price Grid(s)

Availability	Price	Buy Price	Quantity
0 - WHS 1 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 1000 Multiples : 1000 STB11NM60FDT4 STMicroelectronics	1000 : USD 3.7708

0 - WHS 2 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 1 Multiples : 1 STB11NM60FDT4 STMicroelectronics	1 : USD 6.0482

0 - WHS 3 Ships to you between Thu. 23 May to Wed. 29 May Multiples : 1 STB11NM60FDT4 STMicroelectronics

0 - WHS 4 Ships to you between Thu. 23 May to Wed. 29 May MOQ : 1000 Multiples : 1000 STB11NM60FDT4 STMicroelectronics	1000 : USD 2.468

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Additional Infomation About Product

STB11NM60FD - STB11NM60FD-1 STP11NM60FD - STP11NM60FDFP 2 2 N-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D PAK/I PAK FDmesh Power MOSFET (with fast diode) General features Type V R I DSS DS(on) D 3 2 STB11NM60FD 600V <0.45 11A 3 1 2 1 TO-220 STB11NM60FD-1 600V <0.45 11A TO-220FP STP11NM60FD 600V <0.45 11A STP11NM60FDFP 600V <0.45 11A 100% avalanche tested 3 1 High dv/dt and avalanche capabilities 3 2 1 Low input capacitance and gate charge DPDPAAKK IPAK Low gate input resistance Tight process control and high manufacturing Internal schematic diagram yields Description The FDmesh associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters. Applications Switching application Order codes Part number Marking Package Packaging STB11NM60FD B11NM60FD DPAK Tape & reel STB11NM60FD-1 B11NM60FD IPAK Tube STP11NM60FD P11NM60FD TO-220 Tube STP11NM60FDFP P11NM60FDFP TO-220FP Tube July 2006 Rev 9 1/17 www.st.com 17Contents STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP Contents 1 Electrical ratings 3 2 Electrical characteristics . 4 2.1 Electrical characteristics (curves) 6 3 Test circuit 9 4 Package mechanical data 10 5 Packaging mechanical data 15 6 Revision history . 16 2/17

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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Manufacturer STMicroelectronics STMicroelectronics
Product Category MOSFET MOSFET
RoHS - XON Y Y
Id - Continuous Drain Current 11 A 11 A
Vds - Drain-Source Breakdown Voltage 600 V 600 V
Rds On - Drain-Source Resistance 450 mOhms 450 mOhms
Transistor Polarity N - Channel N - Channel
Vgs - Gate-Source Breakdown Voltage 30 V 30 V
Minimum Operating Temperature - 65 C - 65 C
Maximum Operating Temperature + 150 C + 150 C
Pd - Power Dissipation 160 W 160 W
Mounting Style Smd/Smt Smd/Smt
Package / Case D2PAK - 3 D2PAK - 3
Packaging Reel Reel
Channel Mode Enhancement Enhancement
Configuration Single Single
Series Stb11nm60 Stb11nm60
Brand Stmicroelectronics Stmicroelectronics
Forward Transconductance - Min 5.2 S 5.2 S
Fall Time 15 ns 15 ns
Rise Time 16 ns 16 ns
Factory Pack Quantity : 1000 1000