STAC4932B Datasheet HF/VHF/UHF RF power N-channel MOSFET Features 1 V P 1 Order code Frequency Gain Efficiency DD OUT STAC4932B 123 MHz 100 V 1000 W 24.6 dB 60 % 2 Excellent thermal stability 3 Common source push-pull configuration 3 P = 1000 W min. (1200 W typ.) with 24.6 dB gain at 123 MHz OUT STAC780-4B Pulse conditions: 1ms, 10% In compliance with the 2002/95/EC European directive Pin connection ST air-cavity STAC package technology Pin Connection 1 Drain Description 2 Source (bottom side) The STAC4932B is an N-channel MOS field-effect RF power transistor. It is intended 3 Gate for 100 V pulse applications up to 250 MHz. This device is suitable for use in industrial, scientific and medical applications. The STAC4932B benefits from the latest generation of efficient, patent-pending STAC package technology. Product status STAC4932B Product summary Order code STAC4932B Marking STAC4932 Package STAC780-4B Packing Box Base / Bulk qty 20 / 80 DS6724 - Rev 8 - April 2020 www.st.com For further information contact your local STMicroelectronics sales office.STAC4932B Electrical data 1 Electrical data 1.1 Maximum ratings Table 1. Absolute maximum ratings (T = 25 C) CASE Symbol Parameter Value Unit V Drain source voltage (V = 0 V, T = 150 C) 200 V (BR)DSS GS J V Drain-gate voltage (R = 1 M) 200 V DGR GS V GS Gate-source voltage 20 V T Maximum operating junction temperature 200 C J T Storage temperature range -65 to +150 C STG 1.2 Thermal data Table 2. Thermal data (1ms, 10%) Symbol Parameter Value Unit R Junction - case thermal resistance 0.075 C/W thJC 1.3 ESD protection characteristics Table 3. ESD protection Symbol Test Methodology Class HBM Human Body Model (per JESD22-A114) 2 DS6724 - Rev 8 page 2/13