Product Information

PD57018TR-E

PD57018TR-E electronic component of STMicroelectronics

Datasheet
Trans RF MOSFET N-CH 65V 2.5A 3-Pin PowerSO-10RF (Formed lead) T/R
Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

600: USD 22.4852 ea
Line Total: USD 13491.12

0 - Global Stock
MOQ: 600  Multiples: 600
Pack Size: 600

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 600
Multiples : 600

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PD57018TR-E
STMicroelectronics

600 : USD 30.675
3000 : USD 30.375
6000 : USD 30.0625
9000 : USD 29.7625
12000 : USD 29.4625
15000 : USD 29.175
24000 : USD 28.8875
30000 : USD 28.5875
75000 : USD 28.3125

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 600
Multiples : 600

Stock Image

PD57018TR-E
STMicroelectronics

600 : USD 23.1248

0 - Global Stock


Ships to you between Mon. 06 May to Fri. 10 May

MOQ : 600
Multiples : 600

Stock Image

PD57018TR-E
STMicroelectronics

600 : USD 22.4852

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Output Power
Pd - Power Dissipation
Packaging
Operating Temp Range
Screening Level
Number Of Elements
Power Gain Typ Vds
Drain Efficiency Typ
Output Capacitance Typ Vds
Mounting
Channel Type
Channel Mode
Input Capacitance Typ Vds
Rad Hardened
Drain Source Voltage Max
Vswr Max
Pin Count
Forward Transconductance Typ
Drain Source Resistance Max
Frequency Max
Reverse Capacitance Typ
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Additional Infomation About Product

PD57018-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 18 W with 16.5dB gain 945 MHz/28 V OUT New RF plastic package PowerSO-10RF Description (formed lead) The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 28 V in common source mode at frequencies of up to 1 GHz. The device boasts the excellent gain, linearity and reliability of STs latest LDMOS PowerSO-10RF technology mounted in the first true SMD plastic (straight lead) RF power package, PowerSO-10RF. Devices superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer Figure 1. Pin connection high reliability, is the first ST JEDEC approved, Source high power SMD package. It has been specially optimized for RF needs and offers excellent RF performance and ease of assembly. Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Drain Gate Table 1. Device summary Order code Package Packing PD57018-E PowerSO-10RF (formed lead) Tube PD57018S-E PowerSO-10RF (straight lead) Tube PD57018TR-E PowerSO-10RF (formed lead) Tape and reel PD57018STR-E PowerSO-10RF (straight lead) Tape and reel December 2010 Doc ID 12214 Rev 5 1/25 www.st.com 25Contents PD57018-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 4.1 PD57018-E . 6 4.2 PD57018S-E . 8 5 Test circuit 10 6 Circuit layout 12 7 Common source s-parameter 13 8 Package mechanical data 19 9 Revision history . 24 2/25 Doc ID 12214 Rev 5

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Stmicroelectronics may also be referenced as

C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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