PD84008L-E

RefTitle1 PD84008L-E RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs Features Excellent thermal stability Common source configuration P = 8 W with 13 dB gain 870 MHz / 7.5 V OUT Plastic package ESD protection TM In compliance with the 2002/95/EC european PowerFLAT (5 mm x 5 mm) directive Description Figure 1. Pin connection The PD84008L-E is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 7.5 V in common source mode at frequencies of up to 1 GHz. PD84008L-E boasts the excellent gain, linearity and reliability of STs latest LDMOS technology mounted in leadless SMD plastic RF power package, PowerFLAT. Table 1. Device summary Order code Marking Package Packing TM PD84008L-E 84008 Tape and reel PowerFLAT February 2011 Doc ID 14228 Rev 3 1/14 www.st.com 14Contents PD84008L-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Package mechanical data . 9 6 Revision history . 13 2/14 Doc ID 14228 Rev 3