Product Information

PD84002

PD84002 electronic component of STMicroelectronics

Datasheet
Transistors RF MOSFET RF PWR transistor LdmoST plastic fam

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1

Stock Image

PD84002
STMicroelectronics

1 : USD 4.9074
10 : USD 4.2834
100 : USD 3.9558
500 : USD 3.4571
1000 : USD 3.2839
N/A

Obsolete
0 - WHS 2

MOQ : 2500
Multiples : 2500

Stock Image

PD84002
STMicroelectronics

2500 : USD 2.5199
N/A

Obsolete
0 - WHS 3

MOQ : 1
Multiples : 1

Stock Image

PD84002
STMicroelectronics

1 : USD 8.3806
10 : USD 3.014
25 : USD 2.8549
100 : USD 2.4769
500 : USD 2.1089
1000 : USD 1.8403
2500 : USD 1.8303
N/A

Obsolete
0 - WHS 4

MOQ : 2500
Multiples : 2500

Stock Image

PD84002
STMicroelectronics

2500 : USD 2.3307
N/A

Obsolete
0 - WHS 5

MOQ : 4
Multiples : 1

Stock Image

PD84002
STMicroelectronics

4 : USD 2.6494
10 : USD 2.2875
25 : USD 1.9624
100 : USD 1.8079
250 : USD 1.7717
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Technology
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Operating Frequency
Gain
Output Power
Configuration
Pd - Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Vgs - Gate-Source Voltage
Series
Brand
Gate-Source Breakdown Voltage
Factory Pack Quantity :
Type
Channel Mode
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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PD84002 RF power transistor The LdmoST plastic family Features Excellent thermal stability Common source configuration Broadband performances P = 2 W with 13 OUT dB gain 870 MHz Plastic package SOT-89 ESD protection Supplied in tape and reel In compliance with the 2002/95/EC european Figure 1. Pin connection directive Description Source The PD84002 is a common source N-channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7 V in common source mode at frequencies of up to 1 GHz. PD84002s superior gain and efficiency makes it an ideal solution for portable radio and UHF RFID Source reader. Gate Drain Figure 2. Device summary Order code Marking Package Packaging PD84002 8402 SOT-89 Tape and reel December 2007 Rev 1 1/16 www.st.com 16Contents PD84002 Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 ESD protection characteristics 4 2.4 Moisture sensitivity level . 4 3 Impedances 5 4 DC curves . 6 5 RF curves 7 6 Schematic and BOM . 8 7 Photo . 9 8 Package mechanical data 10 8.1 Thermal Pad and Via design 12 8.2 Soldering profile 13 9 Revision history . 15 2/16

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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