PD55035-E PD55035S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features Excellent thermal stability Common source configuration P = 35 W with 16.9dB gain 500 MHz / OUT 12.5 V New RF plastic package PowerSO-10RF (formed lead) Description The device is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 12 V in common source mode at frequencies of up to 1 GHz. The device boasts the PowerSO-10RF excellent gain, linearity and reliability of STs (straight lead) latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO- 10RF. Devices superior linearity performance Figure 1. Pin connection makes it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to Source offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly. Drain Gate Mounting recommendations are available in www.st.com/rf/ (look for application note AN1294). Table 1. Device summary Order code Package Packing PD55035-E PowerSO-10RF (formed lead) Tube PD55035S-E PowerSO-10RF (straight lead) Tube PD55035TR-E PowerSO-10RF (formed lead) Tape and reel PD55035STR-E PowerSO-10RF (straight lead) Tape and reel May 2010 Doc ID 12331 Rev 2 1/22 www.st.com 22Contents PD55035-E, PD55035S-E Contents 1 Electrical data 3 1.1 Maximum ratings 3 1.2 Thermal data . 3 2 Electrical characteristics . 4 2.1 Static . 4 2.2 Dynamic . 4 2.3 Moisture sensitivity level . 4 3 Impedance . 5 4 Typical performance . 6 5 Test circuit . 9 6 Typical performance 175 MHz 10 7 Common source s-parameter 12 8 Package mechanical data 16 9 Revision history . 21 2/22 Doc ID 12331 Rev 2