Product Information

ESDA6V1U1

ESDA6V1U1 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes 6.1V 200W Unidirect

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

6000: USD 0.091 ea
Line Total: USD 546

4461 - Global Stock
Ships to you between
Fri. 03 May to Thu. 09 May
MOQ: 6000  Multiples: 4599
Pack Size: 4599
Availability Price Quantity
4461 - Global Stock


Ships to you between Fri. 03 May to Thu. 09 May

MOQ : 6000
Multiples : 4599

Stock Image

ESDA6V1U1
STMicroelectronics

6000 : USD 0.091

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Cd - Diode Capacitance
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Operating Voltage
Capacitance
Dimensions
Brand
Channels
Mounting Style
Peak Pulse Power Dissipation
Factory Pack Quantity :
Tradename
Cnhts
Hts Code
Mxhts
Subcategory
Taric
Vf - Forward Voltage
LoadingGif

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ESDA6V1U1 TRANSIL ARRAY Application Specific Discretes A.S.D. FOR ESD PROTECTION APPLICATIONS Where transient overvoltage protection in ESD sensitive equipment is required, such as : n COMPUTERS n PRINTERS n COMMUNICATION SYSTEMS n GSM HANDSETS AND ACCESSORIES n CAR RADIO It is particulary recommended for parallel port protection where the line interface withstands only SO-8 2 kV ESD surge. FEATURES n 6 UNIDIRECTIONAL TRANSIL FUNCTIONS FUNCTIONAL DIAGRAM n LOW LEAKAGE CURRENT: I max. < 2 A R n 200 W PEAK PULSE POWER (8/20 s) DESCRITION The ESDA6V1U1 is a monolithic voltage suppressor designed to protect components which are connected to data and transmission lines against ESD. It clamps the voltage just above the logic level supply for positive transients, and to a diode drop below ground for negative transients. BENEFITS High ESD protection level : up to 25 kV High integration Suitable for high density boards COMPLIES WITH THE FOLLOWING STANDARDS : IEC61000-4-2 : level 4 MIL STD 883C-Method 3015-6 : class3 (human body model) August 2002 - Ed: 3A 1/6ESDA6V1U1 ABSOLUTE MAXIMUM RATINGS (T = 25C) amb Symbol Parameter Value Unit V Electrostatic discharge 25 kV PP MIL STD 883C - Method 3015-6 P Peak pulse power (8/20s) 200 W PP Storage temperature range T - 55 to + 150 C stg T Maximum junction temperature 125 C j T Maximum lead temperature for soldering during 10s 260 C L ELECTRICAL CHARACTERISTICS (T =25C) amb Symbol Parameter V Stand-off voltage RM V Breakdown voltage BR V Clamping voltage CL I Leakage current RM I Peak pulse current PP T Voltage temperature coefficient C Capacitance Rd Dynamic resistance V Forward voltage drop F Types V I I V Rd TC V I BR R RM RM F F min. max. max. typ. max. typ. max. note 1 note 2 0V bias -4 VV mA AV 10 /C pF V mA ESDA6V1U1 6.1 7.2 1 2 5 0.5 6 100 1.5 200 note 1 : Square pulse, Ipp = 25A, tp=2.5s. note 2 : V = T* (Tamb -25C) * V (25C) BR BR 2/6

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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