Product Information

ESDA8P30-1T2

ESDA8P30-1T2 electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes Small Transient Voltage Suppressor

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

24000: USD 0.0668 ea
Line Total: USD 1603.2

0 - Global Stock
MOQ: 24000  Multiples: 1
Pack Size: 1
Availability Price Quantity
0 - WHS 1


Ships to you between Fri. 17 May to Thu. 23 May

MOQ : 12000
Multiples : 1

Stock Image

ESDA8P30-1T2
STMicroelectronics

12000 : USD 0.0869
24000 : USD 0.0759

0 - WHS 2


Ships to you between Thu. 23 May to Mon. 27 May

MOQ : 1
Multiples : 1

Stock Image

ESDA8P30-1T2
STMicroelectronics

1 : USD 1.0874
10 : USD 0.8155
100 : USD 0.2034
500 : USD 0.1392
1000 : USD 0.1076

     
Manufacturer
Product Category
Series
Product Type
Vesd - Voltage ESD Contact
Vesd - Voltage ESD Air Gap
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Working Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Cd - Diode Capacitance
Package / Case
Pppm - Peak Pulse Power Dissipation
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Hts Code
LoadingGif

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Pin1 Pin2 ESDA8P30-1T2 Datasheet Small transient voltage suppressor Features Low clamping voltage Peak pulse power: 300 W (8/20 s) Stand-off voltage 6.3 V SOD882T package Unidirectional diode Low leakage current: 0.3 A at 25 C Complies with the following standards: IEC 61000-4-2 level 4 30 kV (air discharge) 30 kV (contact discharge) Pin configuration Application Where transient over voltage protection in ESD sensitive equipment is required, such as: Smartphones, mobile phones, tablets, portable multimedia USB V protection bus Power supply protection Battery protection Description Product status link The ESDA8P30-1T2 is a unidirectional single line TVS diode designed to protect the ESDA8P30-1T2 power line against EOS and ESD transients. The device is ideal for applications where high power TVS and board space saving are required. DS12517 - Rev 3 - October 2018 www.st.com For further information contact your local STMicroelectronics sales office. Pin1 Pin2 ESDA8P30-1T2 Characteristics 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit IEC 61000-4-2 contact discharge >30 V Peak pulse voltage kV pp IEC 61000-4-2 air discharge >30 P Peak pulse power (8/20 s) 300 W pp I Peak pulse current (8/20 s) 30 A pp T Operating junction temperature range -55 to 150 C op T Storage junction temperature range -55 to 150 C stg Figure 1. Electrical characteristics (definitions) I Symbol Parameter V = Breakdown voltage BR V Clamping voltage CL = V V V CL BR RM VVVVVV I Leakage current V = RM RM I RM V = Stand-off voltage RM I R I = Peak pulse current PP R Dynamic resistance Slope = 1/ R = d D I PP I = Breakdown current R Table 2. Electrical characteristics (values) (T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.9 7.3 7.8 V BR R I V = 6.3 V 300 nA RM RM I = 20 A 8/20s 11 PP V V CL I = 30 A 8/20s 12 PP R 8/20s 0.12 D C V = 0 V, F = 1 MHz, V = 30 mV 170 pF LINE LINE OSC DS12517 - Rev 3 page 2/11

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
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