Product Information

ESDA8P80-1U1M

ESDA8P80-1U1M electronic component of STMicroelectronics

Datasheet
ESD Suppressors / TVS Diodes DFD PROTECTION & FILTER

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

8000: USD 0.1362 ea
Line Total: USD 1089.6

0 - Global Stock
MOQ: 8000  Multiples: 8000
Pack Size: 8000
Availability Price Quantity
0 - Warehouse 1


Ships to you between Tue. 07 May to Mon. 13 May

MOQ : 8000
Multiples : 8000

Stock Image

ESDA8P80-1U1M
STMicroelectronics

8000 : USD 0.127

0 - Warehouse 2


Ships to you between Mon. 13 May to Wed. 15 May

MOQ : 1
Multiples : 1

Stock Image

ESDA8P80-1U1M
STMicroelectronics

1 : USD 1.3463
10 : USD 0.6023
100 : USD 0.2982
500 : USD 0.2237

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Series
Product Type
Polarity
Number of Channels
Termination Style
Breakdown Voltage
Clamping Voltage
Ipp - Peak Pulse Current
Package / Case
Minimum Operating Temperature
Maximum Operating Temperature
Brand
Factory Pack Quantity :
Cnhts
Hts Code
Subcategory
Taric
Vf - Forward Voltage
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ESDA8P80-1U1M High power transient voltage suppressor Datasheet - production data Description The ESDA8P80-1U1M is a unidirectional single line TVS diode designed to protect the power line against EOS and ESD transients. 3LQ The device is ideal for applications where high power TVS and board space saving are required. 3LQ Figure 1. Pin configuration SDFNDJH 3LQ 3LQ Features Low clamping voltage Typical peak pulse power: 1100 W (8/20s) Stand-off voltage 6.3 V Unidirectional diode Low leakage current: 0.2 A at 25 C Applications Where transient overvoltage protection in ESD sensitive equipment is required, such as: Portable multimedia, tablets, mobile phone, smart phone USB V protection BUS Power supply protection Battery protection March 2016 DocID028762 Rev 1 1/10 This is information on a product in full production. www.st.comCharacteristics ESDA8P80-1U1M 1 Characteristics Table 1. Absolute maximum ratings (T = 25 C) amb Symbol Parameter Value Unit Peak pulse voltage: V IEC 61000-4-2 contact discharge > 30 kV PP IEC 61000-4-2 air discharge > 30 P Peak pulse power (8/20 s) 1100 W PP I Peak pulse current (8/20 s) 80 A PP T Storage temperature range -55 to +150 C stg T Operating junction temperature range -55 to +150 C op Figure 2. Electrical characteristics (definitions) , , ) 9 99 9 ) 999999 &/ %5 50 , 50 , 5 6ORSH 5 G , 33 Table 2. Electrical characteristics (values, T = 25 C) amb Symbol Test conditions Min. Typ. Max. Unit V I = 1 mA 6.9 7.3 V BR R I V = 5.5 V 200 nA RM RM I V = 6.3 V 1A RM RM V I = 60 A 8/20 s 10.8 12 V CL PP V I = 80 A 8/20 s 11.8 13.2 V CL PP R 8/20 s 0.06 d V I = 10 mA 0.75 V F F 2/10 DocID028762 Rev 1

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES, INCLUDING PHOTOVOLTAIC CELLS WHETHER OR NOT ASSEMBLED IN MODULES OR MADE UP INTO PANELS
C-Max
C-Max (VA)
SG3
ST
ST MICROELECTRONICS
ST2
ST7
STM
STMICRELECTRONICS
STN

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