This is an IGBT (Insulated Gate Bipolar Transistor) device with N-channel enhancement-mode technology, designed for use in high current, high speed switching applications. It is built with an TO-247-3 (TO-3P) package, which provides larger pins for better heat dissipation and improved system reliability. The device also features very low forward voltage and ultrafast switching acceleration. It is RoHS (Restriction of Hazardous Substances) compliant and manufactured by SPS (Sapphire Protection Solutions).