Product Information

STGB20M65DF2

STGB20M65DF2 electronic component of STMicroelectronics

Datasheet
IGBT Transistors Trench gate field-stop IGBT M series, 650 V 20 A low loss

Manufacturer: STMicroelectronics
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.4189 ea
Line Total: USD 2.42

706 - Global Stock
Ships to you between
Fri. 24 May to Wed. 29 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
267 - WHS 1


Ships to you between
Fri. 24 May to Wed. 29 May

MOQ : 1
Multiples : 1

Stock Image

STGB20M65DF2
STMicroelectronics

1 : USD 2.3406
10 : USD 1.9861
30 : USD 1.7646
100 : USD 1.5369
500 : USD 1.4363
1000 : USD 1.39

     
Manufacturer
Product Category
Category
Rohs
Package
Brand Category
Igbt Type
Voltage - Collector Emitter Breakdown Max
Current - Collector Ic Max
Gate Threshold Voltage-Vgeth
Vceon Max @ Vge Ic
LoadingGif

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The STGB20M65DF2 with IGBT Transistors is a specialized integrated circuit (IC) designed and manufactured by STMicroelectronics for power electronics applications. The IGBT is a 350ns Trench Gate Field-stop IGBT M series, with a 650Vrms blocking voltage and a 20A channel current rating. The device is suitable for applications where improved switching performance, higher power densities, and higher efficiencies are needed. Its low losses and high frequency switching capability enable it to deliver excellent dynamic and static performances in very low operating temperatures. It also provides enhanced fault protection features to guard against both static and transient faults.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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