The SPT60N65F1A1T8TL is a type of insulated-gate bipolar transistor (IGBT) that is designed with a TO-247-3 package and manufactured by SPS. It features a high current operating capability of 60A and a voltage rating of 650V. The rated collector-emitter voltage (VCES) of the device is 650V, and the gate-emitter voltage (VGE) is 20V. The device has a maximum junction temperature of 175 degrees Celsius and an insulation voltage of 500V. It is also RoHS compliant. The device can be applied in high power switching applications such as motor control, robotics, and industrial automation processes.