Product Information

SKM195GB066D

SKM195GB066D electronic component of Semikron

Datasheet
IGBT half-bridge; Urmax:600V; Ic:200A; Ifsm:1.4kA; SEMITRANS2
Manufacturer: Semikron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 90.468 ea
Line Total: USD 90.47

93 - Global Stock
Ships to you between
Mon. 13 May to Fri. 17 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
70 - WHS 1


Ships to you between Mon. 13 May to Fri. 17 May

MOQ : 1
Multiples : 1

Stock Image

SKM195GB066D
Semikron

1 : USD 91.247
8 : USD 87.737

Read More Specifications

     
Manufacturer
Product Category
Semiconductor Structure
Mounting
Electrical Mounting
Topology
Version
Case
Type Of Module
Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

SKM 195GB066D Absolute Maximum Ratings Symbol Conditions Values Units IGBT SEMITRANS 2 Inverse Diode Trench IGBT Modules SKM195GB066D Module Features Characteristics Symbol Conditions min. typ. max. Units IGBT Typical Applications* Remarks GB 1 22-03-2011 GIL by SEMIKRONSKM 195GB066D Characteristics Symbol Conditions min. typ. max. Units Inverse Diode SEMITRANS 2 Module Trench IGBT Modules SKM195GB066D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of Typical Applications* our staff. Remarks GB 2 22-03-2011 GIL by SEMIKRON

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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