Product Information

SKM 300GB126D

SKM 300GB126D electronic component of Semikron

Datasheet
IGBT half-bridge; Urmax:1.2kV; Ic:200A; Ifsm:400A; SEMITRANS3
Manufacturer: Semikron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 295.2537 ea
Line Total: USD 295.25

11 - Global Stock
Ships to you between
Fri. 24 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
11 - WHS 1


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

SKM 300GB126D
Semikron

1 : USD 288.73
3 : USD 286.325
8 : USD 277.628

Read More Specifications

     
Manufacturer
Product Category
Case
Mounting
Semiconductor Structure
Electrical Mounting
Topology
Type Of Module
Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

SKM 300GB126D Absolute Maximum Ratings Symbol Conditions Values Units IGBT SEMITRANS 3 Inverse Diode Trench IGBT Module SKM 300GB126D Module Features Characteristics Symbol Conditions min. typ. max. Units IGBT Typical Applications* GB 1 06-10-2009 NOS by SEMIKRONSKM 300GB126D Characteristics Symbol Conditions min. typ. max. Units Inverse diode SEMITRANS 3 Trench IGBT Module Module SKM 300GB126D Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. Typical Applications* * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our personal. GB 2 06-10-2009 NOS by SEMIKRON

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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