Product Information

SKM 100GB125DN

SKM 100GB125DN electronic component of Semikron

Datasheet
IGBT half-bridge; Urmax:1.2kV; Ic:80A; Ifsm:150A; SEMITRANS2N
Manufacturer: Semikron
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 155.207 ea
Line Total: USD 155.21

50 - Global Stock
Ships to you between
Mon. 20 May to Fri. 24 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
50 - WHS 1


Ships to you between Mon. 20 May to Fri. 24 May

MOQ : 1
Multiples : 1

Stock Image

SKM 100GB125DN
Semikron

1 : USD 155.207

Read More Specifications

     
Manufacturer
Product Category
Case
Version
Mounting
Semiconductor Structure
Electrical Mounting
Topology
Type Of Module
Max Forward Impulse Current
Max Off-State Voltage
Collector Current
Gate-Emitter Voltage
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Additional Infomation About Product

SKM 100GB125DN Absolute Maximum Ratings Symbol Conditions Values Units IGBT SEMITRANS 2N Inverse Diode Ultra Fast IGBT Module SKM 100GB125DN Module Features Characteristics Symbol Conditions min. typ. max. Units IGBT Typical Applications* GB 1 02-08-2012 DIL by SEMIKRONSKM 100GB125DN Characteristics Symbol Conditions min. typ. max. Units Inverse Diode SEMITRANS 2N Ultra Fast IGBT Module Module SKM 100GB125DN Features This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. * The specifications of our components may not be considered as an assurance of component characteristics. Components have to be tested for the respective application. Adjustments may be necessary. The use of SEMIKRON products in life support appliances and systems is subject to prior specification and written approval by SEMIKRON. We therefore strongly recommend prior consultation of our staff. Typical Applications* GB 2 02-08-2012 DIL by SEMIKRON

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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