X-On Electronics has gained recognition as a prominent supplier of RQ5E030AJTCL mosfet across the USA, India, Europe, Australia, and various other global locations. RQ5E030AJTCL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ5E030AJTCL ROHM

RQ5E030AJTCL electronic component of ROHM
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See Product Specifications
Part No.RQ5E030AJTCL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET Nch 30V 3Ad Si MOSFET
Datasheet: RQ5E030AJTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.437 ea
Line Total: USD 0.44

Availability - 4498
Ships to you between
Thu. 20 Jun to Mon. 24 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
4498 - WHS 1


Ships to you between Thu. 20 Jun to Mon. 24 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4278
10 : USD 0.3715
100 : USD 0.2806
500 : USD 0.2265
1000 : USD 0.1806
3000 : USD 0.1667
9000 : USD 0.1518
24000 : USD 0.1495
45000 : USD 0.1461

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Transistor Type
Brand
Forward Transconductance - Min
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
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We are delighted to provide the RQ5E030AJTCL from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the RQ5E030AJTCL and other electronic components in the MOSFET category and beyond.

RQ5E030AJ Datasheet Nch 30V 3A Middle Power MOSFET llOutline SOT-346T V 30V DSS SC-96 R (Max.) 75m DS(on) TSMT3 I 3.0A D P 1.0W D llInner circuit llFeatures 1) Low on - resistance. 2) Small Surface Mount Package. 3) Pb-free lead plating RoHS compliant llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking HW llAbsolute maximum ratings (T = 25C ,unless otherwise specified) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS Continuous drain current I 3.0 A D *2 I Pulsed drain current 6.0 A DP V Gate - Source voltage 12 V GSS *3 Avalanche current, single pulse I 3.0 A AS *3 E Avalanche energy, single pulse 0.69 mJ AS *4 P 1.0 W D Power dissipation *5 P 0.76 W D Junction temperature T 150 j T Operating junction and storage temperature range -55 to +150 stg www.rohm.com 2015 ROHM Co., Ltd. All rights reserved. 1/11 20160112 - Rev.003 RQ5E030AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *4 R - - 125 /W thJA Thermal resistance, junction - ambient *5 R - - 165 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I V = 12V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -1.8 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 3.0A - 57 75 GS D Static drain - source *6 R m DS(on) on - state resistance V = 2.5V, I = 1.5A - 81 109 GS D R Gate resistance f = 1MHz, open drain - 3.3 - G Forward Transfer *6 Y V = 5V, I = 3A 2.7 - - S fs DS D Admittance *1 Limited only by maximum temperature allowed. *2 Pw 10s, Duty cycle 1% *3 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G j *4 Mounted on a ceramic boad (30300.8mm) *5 Mounted on a FR4 (25250.8mm) *6 Pulsed www.rohm.com 2/11 20160112 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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