Product Information

RCJ081N20TL

RCJ081N20TL electronic component of ROHM

Datasheet
MOSFET 10V Drive Nch Power MOSFET

Manufacturer: ROHM
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 1.5673 ea
Line Total: USD 1.57

733 - Global Stock
Ships to you between
Thu. 16 May to Mon. 20 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
733 - WHS 1


Ships to you between Thu. 16 May to Mon. 20 May

MOQ : 1
Multiples : 1
1 : USD 1.311
10 : USD 1.0695
100 : USD 0.8315
500 : USD 0.705
1000 : USD 0.5681
2000 : USD 0.5347
5000 : USD 0.5095
10000 : USD 0.491
25000 : USD 0.4888

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Transistor Type
Brand
Fall Time
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Cnhts
Hts Code
Mxhts
Taric
LoadingGif

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RCJ081N20 Nch 200V 8.0A Power MOSFET Datasheet l Outline (2) V 200V DSS LPT(S) (SC-83) R (Max.) 770mW DS(on) I 8.0A D (1) P 40W (3) D l l Features Inner circuit 1) Low on-resistance. (1) Gate 2) Fast switching speed. (2) Drain (3) Source 3) Drive circuits can be simple. 4) Parallel use is easy. *1 BODY DIODE 5) Pb-free lead plating RoHS compliant 6) 100% Avalanche tested lPackaging specifications Packaging Taping Reel size (mm) 330 lApplication Tape width (mm) 24 Switching Power Supply Type Quantity (pcs) 1,000 Automotive Motor Drive Taping code TL Automotive Solenoid Drive Marking RCJ081N20 lAbsolute maximum ratings(T = 25C) a Parameter Symbol Value Unit Drain - Source voltage V 200 V DSS *1 T = 25C I 8.0 A c D Continuous drain current *1 T = 100C A I 4.3 c D *2 Pulsed drain current I 32 A D,pulse V Gate - Source voltage 30 V GSS *3 Avalanche energy, single pulse 5.17 mJ E AS *3 Avalanche current I 4.0 A AR T = 25C P 40 W c D Power dissipation *4 P T = 25C 1.56 W D a T Junction temperature 150 C j Range of storage temperature T C -55 to +150 stg www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 1/12Data Sheet RCJ081N20 lThermal resistance Values Parameter Symbol Unit Min. Typ. Max. R - - 3.125 C/W Thermal resistance, junction - case thJC *4 R - - 80 C/W Thermal resistance, junction - ambient thJA T Soldering temperature, wavesoldering for 10s - - 265 C sold lElectrical characteristics(T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. V V = 0V, I = 1mA Drain - Source breakdown voltage 200 - - V (BR)DSS GS D V = 200V, V = 0V DS GS - - 10 T = 25C j Zero gate voltage drain current I mA DSS V = 200V, V = 0V DS GS - - 100 T = 125C j I V = 30V, V = 0V Gate - Source leakage current - - 100 nA GSS GS DS Gate threshold voltage V V = 10V, I = 1mA 3.25 - 5.25 V GS (th) DS D V = 10V, I = 4.0A - 550 770 GS D Static drain - source *5 V = 10V, I = 4.0A R mW GS D DS(on) on - state resistance - 1100 1540 T = 125C j g V = 10V, I = 4.0A Forward transfer admittance 1.0 2.0 - S fs DS D www.rohm.com 2012 ROHM Co., Ltd. All rights reserved. 2019.05 - Rev.B 2/12

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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