Product Information

BUK7Y08-40B,115

BUK7Y08-40B,115 electronic component of Nexperia

Datasheet
MOSFET N-CH TRENCHMOS STD LVL FET
Manufacturer: Nexperia
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 2.925 ea
Line Total: USD 2.92

0 - Global Stock
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
0 - WHS 1


Ships to you between
Fri. 31 May to Wed. 05 Jun

MOQ : 1
Multiples : 1
1 : USD 1.7456
10 : USD 1.7031
30 : USD 1.6753
100 : USD 1.6477

0 - WHS 2


Ships to you between Thu. 30 May to Mon. 03 Jun

MOQ : 1
Multiples : 1
1 : USD 2.925
10 : USD 1.0992
100 : USD 0.8235
500 : USD 0.6797
1000 : USD 0.5438
1500 : USD 0.5037

0 - WHS 3


Ships to you between Fri. 24 May to Thu. 30 May

MOQ : 15
Multiples : 1
15 : USD 2.4304

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Configuration
Transistor Type
Brand
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
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Additional Infomation About Product

BUK7Y08-40B N-channel TrenchMOS standard level FET Rev. 03 7 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features and benefits Q101 compliant Suitable for thermally demanding environments due to 175 C rating Suitable for standard level gate drive sources 1.3 Applications 12 V loads General purpose power switching Automotive systems Motors, lamps and solenoids 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175C --40 V DS j j voltage 1 I drain current V =10V T =25C --75 A D GS mb see Figure 4 see Figure 1 P total power T = 25 C see Figure 2 --105W tot mb dissipation Static characteristics R drain-source V =10V I =25A - 68m DSon GS D on-state T =25C see Figure 12 j resistance see Figure 13 Avalanche ruggedness E non-repetitive I =75A V 40 V --146mJ DS(AL)S D sup drain-source R =50 V =10V GS GS avalanche energy T = 25 C unclamped j(init) Dynamic characteristics Q gate-drain charge I =25A V =32V -14.7-nC GD D DS V = 10 V see Figure 14 GS 1 Continuous current is limited by package.BUK7Y08-40B Nexperia N-channel TrenchMOS standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version BUK7Y08-40B LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 BUK7Y08-40B All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 03 7 April 2010 2 of 14

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

Nexperia may also be referenced as

Nexperia
NEXPERIA USA INC
Nexperia USA Inc.

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