X-On Electronics has gained recognition as a prominent supplier of RQ5E040AJTCL mosfet across the USA, India, Europe, Australia, and various other global locations. RQ5E040AJTCL mosfet are a product manufactured by ROHM. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

RQ5E040AJTCL

RQ5E040AJTCL electronic component of ROHM
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See Product Specifications
Part No.RQ5E040AJTCL
Manufacturer: ROHM
Category:MOSFET
Description: MOSFET NPN Low VCE(sat) Transistor
Datasheet: RQ5E040AJTCL Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

174: USD 0.234 ea
Line Total: USD 40.72

Availability - 14094
Ships to you between
Thu. 30 May to Wed. 05 Jun
MOQ: 174  Multiples: 1
Pack Size: 1
Availability Price Quantity
3548 - WHS 1


Ships to you between Wed. 05 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1
1 : USD 0.4956
10 : USD 0.422
100 : USD 0.2967
500 : USD 0.2392
1000 : USD 0.2001
3000 : USD 0.1737
9000 : USD 0.1725
24000 : USD 0.1691

14094 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 174
Multiples : 1
174 : USD 0.234
200 : USD 0.2324
500 : USD 0.1967
1000 : USD 0.1852
2000 : USD 0.1837
3000 : USD 0.1755
6000 : USD 0.1674
12000 : USD 0.1583

2035 - WHS 3


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 278
Multiples : 1
278 : USD 0.3667
500 : USD 0.3536
1000 : USD 0.342

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We proudly offer the RQ5E040AJTCL MOSFET at competitive prices in the United States, Australia, India, Europe and more. By maintaining strong relationships with manufacturers and optimizing our operations, we provide significant savings to our customers. Customer satisfaction is at the heart of our business. Our knowledgeable and friendly customer service team is always ready to assist you with any inquiries or issues. From product selection to after-sales support, we are dedicated to providing our customers with a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why we are the top choice for the RQ5E040AJTCL MOSFET.

RQ5E040AJ Datasheet Nch 30V 4A Middle Power MOSFET llOutline TSMT3 V 30V DSS R (Max.) 37m DS(on) I 4.0A D (SC-96) P 1W D llInner circuit llFeatures 1) Low on - resistance. 2) High Power Package (TSMT3). 3) Pb-free lead plating RoHS compliant. 4) Halogen Free. llPackaging specifications Embossed Packing Tape Reel size (mm) 180 llApplication Tape width (mm) 8 Type Switching Basic ordering unit (pcs) 3000 Taping code TCL Marking FK llAbsolute maximum ratings (T = 25C) a Parameter Symbol Value Unit V Drain - Source voltage 30 V DSS I Continuous drain current 4.0 A D *1 I Pulsed drain current 16 A D,pulse V Gate - Source voltage 12 V GSS *2 E Avalanche energy, single pulse 1.2 mJ AS *2 I Avalanche current 4.0 A AS *3 P Power dissipation 1 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/11 2015 ROHM Co., Ltd. All rights reserved. 20150316 - Rev.001 RQ5E040AJ Datasheet llThermal resistance Values Parameter Symbol Unit Min. Typ. Max. *3 R Thermal resistance, junction - ambient - - 125 /W thJA llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Drain - Source breakdown V V = 0V, I = 1mA 30 - - V (BR)DSS GS D voltage V I = 1mA (BR)DSS D Breakdown voltage - 18 - mV/ temperature coefficient T referenced to 25 j Zero gate voltage I V = 30V, V = 0V - - 1 A DSS DS GS drain current I Gate - Source leakage current V = 12V, V = 0V - - 100 nA GSS GS DS V V = V , I = 1mA Gate threshold voltage 0.5 - 1.5 V GS(th) DS GS D V I = 1mA GS(th) D Gate threshold voltage - -2.0 - mV/ temperature coefficient T referenced to 25 j V = 4.5V, I = 4.0A - 27 37 GS D Static drain - source *4 R m DS(on) on - state resistance V = 2.5V, I = 4.0A - 39 54 GS D R Gate input resistance f=1MHz, open drain - 2.5 - G Forward Transfer *4 Y V = 5V, I = 4A 4.2 - - S fs DS D Admittance *1 Pw10s , Duty cycle 1% *2 L 0.1mH, V = 15V, R = 25, STARTING T = 25 Fig.3-1,3-2 DD G ch *3 Mounted on a ceramic boad (30300.8mm) *4 Pulsed www.rohm.com 2/11 20150316 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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